Random Telegraph Noise of MIS and MIOS Silicon Nitride memristors at different resistance states

Vasileiadis, Nikolaos; Loukas, Panagiotis; Mavropoulis, Alexandros; Normand, P.; Karafyllidis, Ioannis; Sirakoulis, Georgios Ch.; Dimitrakis, P.

doi:10.1109/nano54668.2022.9928707

Cited by 3 publications

References 14 publications

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Atomic Layer Annealing on Ultrathin SiN_x Resistive Switching Layer for Low-Voltage Operation of Resistive Random Access Memory

Ling,

Ku,

Chuang

et al. 2024

ACS Appl. Electron. Mater.

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This study investigates the effect of atomic layer annealing (ALA) on the resistive switching characteristics of SiN xbased resistive random access memory (RRAM) devices. The energy transfer occurs in the ALA process via the in situ plasma treatment introduced in each cycle of atomic layer deposition. The ALA treatment reduces nitrogen vacancies and increases the film density of the SiN x layer with a thickness of only 3.5 nm, as revealed by X-ray reflectivity and X-ray photoelectron spectroscopy analyses. Consequently, the SiN x RRAM devices subjected to ALA demonstrate lower operating voltages and improved uniformity in their resistive switching properties. Furthermore, the ALA treatment contributes to a significant enhancement in pulse endurance of over 10 4 cycles and an exceptional retention time exceeding 10 6 seconds at 125 °C. This research provides a promising approach to improving the performance of SiN x RRAM devices characterized by low-voltage operation along with high uniformity and reliability.

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Atomic Layer Annealing on Ultrathin SiN_x Resistive Switching Layer for Low-Voltage Operation of Resistive Random Access Memory

Ling,

Ku,

Chuang

et al. 2024

ACS Appl. Electron. Mater.

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Substrate Effect on Low-frequency Noise of synaptic RRAM devices

Vasileiadis

Mavropoulis

Loukas

et al. 2022

2022 IFIP/IEEE 30th International Conference on Very Large Scale Integration (VLSI-SoC)

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Effect of Nitrogen Ion Diffusion Jumps in Nanometer-Sized Si₃N₄ Memristors Investigated by Low-Frequency Noise Spectroscopy

Yakimov,

Klyuev,

Filatov

et al. 2023

Fluct. Noise Lett.

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The elementary jumps in the electron current through conducting filaments of two nanometer-sized virtual memristor structures consisting of a contact of a conductive atomic force microscope probe to the Si3N4 layer with the thickness of 6[Formula: see text]nm deposited onto the [Formula: see text]-Si(001) conductive substrates are investigated. These structures are: (S1) the Si3N4/Si film; (S2) the Si3N4/SiO2/Si stack, a similar structure with 2[Formula: see text]nm SiO2 sublayer between the film and the substrate. Usually, such investigations are performed by the analysis of the waveform of this current with the aim of extracting the random telegraph noise (RTN). Here, we develop a new indirect method, which is based on the measurement of the spectrum of the low-frequency flicker noise in the current without extracting the RTN. We propose that the flicker noise is caused by the motion (drift/diffusion) of nitrogen ions via vacancies within and around the filament. The number of these ions is estimated by taking into account the geometrical parameters of the filament. This allows us to estimate the root mean square magnitude [Formula: see text] of the current jumps, which are caused by random jumps of nitrogen ions, and the number M of these ions. This is fundamental for understanding the elementary mechanisms of the electron current flowing through the filament and the resistive switching in memristor devices.

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Random Telegraph Noise of MIS and MIOS Silicon Nitride memristors at different resistance states

Cited by 3 publications

References 14 publications

Atomic Layer Annealing on Ultrathin SiN_x Resistive Switching Layer for Low-Voltage Operation of Resistive Random Access Memory

Atomic Layer Annealing on Ultrathin SiN_x Resistive Switching Layer for Low-Voltage Operation of Resistive Random Access Memory

Substrate Effect on Low-frequency Noise of synaptic RRAM devices

Effect of Nitrogen Ion Diffusion Jumps in Nanometer-Sized Si₃N₄ Memristors Investigated by Low-Frequency Noise Spectroscopy

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Random Telegraph Noise of MIS and MIOS Silicon Nitride memristors at different resistance states

Cited by 3 publications

References 14 publications

Atomic Layer Annealing on Ultrathin SiNx Resistive Switching Layer for Low-Voltage Operation of Resistive Random Access Memory

Atomic Layer Annealing on Ultrathin SiNx Resistive Switching Layer for Low-Voltage Operation of Resistive Random Access Memory

Substrate Effect on Low-frequency Noise of synaptic RRAM devices

Effect of Nitrogen Ion Diffusion Jumps in Nanometer-Sized Si3N4 Memristors Investigated by Low-Frequency Noise Spectroscopy

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Product

Resources

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Atomic Layer Annealing on Ultrathin SiN_x Resistive Switching Layer for Low-Voltage Operation of Resistive Random Access Memory

Atomic Layer Annealing on Ultrathin SiN_x Resistive Switching Layer for Low-Voltage Operation of Resistive Random Access Memory

Effect of Nitrogen Ion Diffusion Jumps in Nanometer-Sized Si₃N₄ Memristors Investigated by Low-Frequency Noise Spectroscopy