2019
DOI: 10.3390/s19245447
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Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors

Abstract: In this paper we present a systematic approach to sort out different types of random telegraph noises (RTN) in CMOS image sensors (CIS) by examining their dependencies on the transfer gate off-voltage, the reset gate off-voltage, the photodiode integration time, and the sense node charge retention time. Besides the well-known source follower RTN, we have identified the RTN caused by varying photodiode dark current, transfer-gate and reset-gate induced sense node leakage. These four types of RTN and the dark si… Show more

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Cited by 15 publications
(10 citation statements)
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“…Both proton and γ irradiation have been found to cause RTS in semiconductor devices like CMOS image sensors and GM-APDs with active areas as small as 0.8 µm [19][20][21][26][27][28]. Increasing the size of the active area mitigates RTS as fewer defects will be able to affect charge transport through the semiconductor [21].…”
Section: Random Telegraph Signalsmentioning
confidence: 99%
“…Both proton and γ irradiation have been found to cause RTS in semiconductor devices like CMOS image sensors and GM-APDs with active areas as small as 0.8 µm [19][20][21][26][27][28]. Increasing the size of the active area mitigates RTS as fewer defects will be able to affect charge transport through the semiconductor [21].…”
Section: Random Telegraph Signalsmentioning
confidence: 99%
“…It is well known that CMOS detectors exhibit "random telegraph noise" (RTN), which is evident as a long tail in the distribution of pixel noise levels of bias or dark images that extends to many times (up to 10 or 100) the median of the distribution (e.g., Chao et al 2019). This RTN is a phenomenon that results from capture and release of electrons by defects in the gate oxide of the detector.…”
Section: Bias and Pixel Noisementioning
confidence: 99%
“…However, because of its high noise magnitude and trimodal noise signature, the RTN pixels are usually shown in the low-light images as "blinking" pixels and have strong degradation to the image quality. The RTN in CIS is well known to be linked to the trapping/emission events of the defects-induced energy states inside the pixels, especially inside the Si-gate oxide interface in the SF channel, e.g., [81]- [93]. Other RTN sources have also been observed in CIS [83], [84], [93], such as the photodiode dark current induced RTN and the gate-induced drain leakage (GIDL)induced RTN.…”
Section: Sf Temporal Noisementioning
confidence: 99%
“…The RTN in CIS is well known to be linked to the trapping/emission events of the defects-induced energy states inside the pixels, especially inside the Si-gate oxide interface in the SF channel, e.g., [81]- [93]. Other RTN sources have also been observed in CIS [83], [84], [93], such as the photodiode dark current induced RTN and the gate-induced drain leakage (GIDL)induced RTN.…”
Section: Sf Temporal Noisementioning
confidence: 99%