Random Walk Simulation for the Growth of Monolayer in Dip Pen Nanolithography

Abstract

Using a simple random walk model, this study simulated the growth of a self-assembled monolayer (SAM) pattern generated by dip-pen nanolithography (DPN). In this model, the SAM pattern grew mainly via the serial pushing of molecules deposited from the tip. This study examined various SAM patterns, such as lines, crosses and letters, by changing the tip scan speed.