Abstract:An ultra high vacuum, low energy ion implanter was used in conjunction with a range of analytical techniques to study the range and damage distributions of B/sup +/ ions implanted at normal incidence into Si(100) samples held at room temperature. Samples were implanted over a dose range from 1E14 ions/cm/sup 2/ with and without a surface oxide layer and those implanted at 1 keV and below were capped with a nominal 20 nm layer of /sup 28/Si by ion beam deposition in situ in order to produce an oxygen equilibrat… Show more
Nondestructive analysis of ultrashallow junctions using thermal wave technology Rev. Sci. Instrum. 74, 586 (2003); 10.1063/1.1515890Study of low energy implants for ultrashallow junctions using thermal wave and optical techniques Rev.
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