Range studies of aluminum, boron, and nitrogen implants in 4H-SiC

Stief, R.; Lucassen, M.; Schork, R.; Ryssel, H.; Hölzlein, K.; Rupp, Roland; Stephani, D.

doi:10.1109/iit.1998.813778

Cited by 4 publications

(4 citation statements)

References 6 publications

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“…Figure 2 shows the BCA-simulated 70-keV Al concentration profiles fitted with the Singleand Dual-Pearson distributions. While the Single-Pearson model [3,4] could not explain the tails nor their dose dependences, our Dual-Pearson model precisely reproduced each BCA-simulated profile with Fig. 2.…”

Section: Resultsmentioning

confidence: 70%

“…In Fig. 4(b), ∆R p1 and ∆R p2 do not saturate even at 400 keV, which indicates both the nuclear and electronic stopping contribute to the stopping process of channeled, as well as non-channeled [3], Al ions in 4H-SiC. As for channeling, at large φ and E, the influence of channeling becomes small, i.e., R becomes closer to unity (Fig.…”

Section: Resultsmentioning

confidence: 90%

“…Although accurate continuous function approximation using the Dual-Pearson distribution has already been established for Si [2], only a Single-Pearson approach, in which ion channeling cannot be modeled, has been tried in 4H-SiC [3,4]. Channeling plays a dominant role in determining the junction depth (Fig.…”

Section: Introductionmentioning

confidence: 99%

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Dual-Pearson Approach to Model Ion-Implanted Al Concentration Profiles for High-Precision Design of High-Voltage 4H-SiC Power Devices

Mochizuki

Onose

2008

MSF

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We demonstrate a Dual-Pearson approach to model ion-implanted Al concentration profiles in 4H-SiC for high-precision design of high-voltage power devices. Based on the Monte Carlo simulated data for 35-400 keV implantation, we determine the nine Dual-Pearson parameters and confirm precise reproduction of profiles of 1015-1021 cm-3 Al with sufficient smoothness. This leads to a direct incorporation of implanted Al profiles into a device simulator. The influence of dose and energy on channeling is also discussed from the view point of implantation-induced disorder in 4H-SiC.

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Section: Resultsmentioning

confidence: 70%

Section: Resultsmentioning

confidence: 90%

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Dual-Pearson Approach to Model Ion-Implanted Al Concentration Profiles for High-Precision Design of High-Voltage 4H-SiC Power Devices

Mochizuki

Onose

2008

MSF

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“…A implantação de dopantes em substratos de Si por meio do aquecimento é o método mais utilizado atualmente, porém para substratos de SiC a dopagem por aquecimento em pontos específicos (por exemplo o contato N+ da fonte), só é possível por meio da implantação iônica [92] [93]. No entanto, há muito mais preocupações sobre o processo de dopagem, uma vez que o carbono também tende a competir com os dopantes pela mesma posição no cristal [42].…”

Section: Variação Da Concentração Do Canalunclassified

Análise das propriedades básicas do sic VDMOSFET (WBG) para aplicações de tração automotiva

Feitosa¹

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The vehicular fleet around the world is going through an enormous transition in its energetic matrix, mostly because governments around the globe are concerned about pollution. This paper focus on the research of Wide Band Gap (WBG) Silicon Carbide (SiC) Vertical Double Diffused Metal Oxide Semiconductor Field Effect Transistor (VDMOSFET), concerning to its use in electric vehicles, through manufacturer datasheet data and TCAD simulation analysis. Three main parameters were addressed: interface charge density, channel doping concentration density and gate to channel overlap/underlap. For each of the parameters, the IDS x VDS curves were traced for several values. Threshold voltage (Vth), maximum transconductance (max. gm) and subthreshold slope (S) were analyzed. This work describes in detail the device characteristics and mathematical models that are needed for TCAD simulation. This work shows the importance of power electronics for electric vehicles (EVs), what is the current and future EVs` need, and highlights the advantages that the SiC VDMOSFET presents. The analyzed data show that the threshold voltage and subthreshold slope increase with the increase on channel dopant concentration. As for the increase interface charge, it was observed that the threshold voltage decreases, and that the same occurs when there is a gate underlap. The maximum transconductance deteriorates with the increase in the channel doping concentration in greater level when compared with the maximum transconductance deterioration caused by the interface charge increase. However, gate underlap drastically deteriorates the maximum transconductance, and subthreshold slope increases as the gate underlap increases.

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Detailed Analysis and Precise Modeling of Multiple-Energy Al Implantations Through $\hbox{SiO}_{2}$ Layers Into 4H-SiC

Mochizuki

Someya

Takahama

et al. 2008

IEEE Trans. Electron Devices

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Range studies of aluminum, boron, and nitrogen implants in 4H-SiC

Cited by 4 publications

References 6 publications

Dual-Pearson Approach to Model Ion-Implanted Al Concentration Profiles for High-Precision Design of High-Voltage 4H-SiC Power Devices

Dual-Pearson Approach to Model Ion-Implanted Al Concentration Profiles for High-Precision Design of High-Voltage 4H-SiC Power Devices

Análise das propriedades básicas do sic VDMOSFET (WBG) para aplicações de tração automotiva

Detailed Analysis and Precise Modeling of Multiple-Energy Al Implantations Through $\hbox{SiO}_{2}$ Layers Into 4H-SiC

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