2018
DOI: 10.1002/jrs.5456
|View full text |Cite
|
Sign up to set email alerts
|

Rapid and adjustable shifted excitation Raman difference spectroscopy using a dual‐wavelength diode laser at 785 nm

Abstract: In this paper, we present rapid and adjustable shifted excitation Raman difference spectroscopy (SERDS). A dual-wavelength diode laser emitting at 785 nm is used as the excitation light source. Two laser resonators are realized in a single chip, and two distributed Bragg reflector gratings provide two excitation lines at 785 nm. For each laser line, an optical power of 170 mW is achieved. This is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License, which p… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
23
0

Year Published

2019
2019
2021
2021

Publication Types

Select...
5

Relationship

2
3

Authors

Journals

citations
Cited by 26 publications
(24 citation statements)
references
References 31 publications
0
23
0
Order By: Relevance
“…[65] Near infrared (NIR) or deep ultraviolet (UV) laser sources could effectively avoid those problems and, taking into consideration cost, weight, and fluorescence mitigation, most portable Raman spectrometers adopt diode lasers. [66][67][68] Therefore, the wavelengths of solid-state semiconductor lasers currently employed are 532 nm or 785 nm; the excitation wavelength of 1064 nm might be proposed in few cases (Figure 4). [69,70] Cullumet al presented a lightweight and highly integrated, portable Raman spectrometer which consisted of a 632.8 nm helium-neon (He-Ne) laser, an acousto-optic tuneable filter (AOTF), and an avalanche photodiode.…”
Section: Progress In Portable Raman Spectrometersmentioning
confidence: 99%
See 2 more Smart Citations
“…[65] Near infrared (NIR) or deep ultraviolet (UV) laser sources could effectively avoid those problems and, taking into consideration cost, weight, and fluorescence mitigation, most portable Raman spectrometers adopt diode lasers. [66][67][68] Therefore, the wavelengths of solid-state semiconductor lasers currently employed are 532 nm or 785 nm; the excitation wavelength of 1064 nm might be proposed in few cases (Figure 4). [69,70] Cullumet al presented a lightweight and highly integrated, portable Raman spectrometer which consisted of a 632.8 nm helium-neon (He-Ne) laser, an acousto-optic tuneable filter (AOTF), and an avalanche photodiode.…”
Section: Progress In Portable Raman Spectrometersmentioning
confidence: 99%
“…[68,[73][74][75] Maiwald et al developed a rapid and adjustable SERDS, in which a dual-wavelength diode laser based on the excitation wavelength of 785 nm was used as the light source ( Figure 6). [66] F I G U R E 3 Schematic representation of a portable Raman spectrometer F I G U R E 4 Compact advantage 1064 system operated by external computer and equipped by knee-shaped optical head. (Adapted from Vitek et al (2012) [69] with permission from Elsevier.…”
Section: Progress In Portable Raman Spectrometersmentioning
confidence: 99%
See 1 more Smart Citation
“…The results demonstrate rapid and adjustable SERDS using a dual-wavelength diode laser as a potential tool for Raman applications such as real-time diagnostic during surgeries, in situ measurements, which require quick on-site decisions, and Raman experiments with strong background interferences, for example, from laserinduced fluorescence and ambient light. [204]…”
Section: New or Emerging Techniquesmentioning
confidence: 99%
“…In this work, we analyse the suitability of an electrically tunable two color distributed Bragg reflector (DBR) diode laser at 785-nm centre wavelength for THz applications. The diode laser was successfully developed for the abovementioned Raman spectroscopic applications [11,12] where the two wavelengths were used alternatingly. In contrast, in this work, the laser operates at both wavelengths simultaneously in order to generate THz radiation.…”
Section: Introductionmentioning
confidence: 99%