Rapid and high sensitive structure evaluation of ferroelectric films using micro-Raman spectroscopy:<i>In-situ</i>observation of stress accumulation and release in PbTiO<sub>3</sub>films during first cooling process

Nishide, Masamichi; Matsuoka, Masashi; Tai, Takeshi; Katoda, Takashi; Funakubo, Hiroshi; Nishida, Ken; Yamamoto, Takashi

doi:10.1088/1757-899x/18/9/092002

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“…The Curie temperature and stress can be estimated from the E (2TO) mode [11]. Figure 7(a) shows the frequencies of the E (2TO) mode of the PTO films as the temperature decreases for both the fast and slow cooling processes.…”

Section: Resultsmentioning

confidence: 99%

“…We have revealed that the accumulation and relaxation of strain in a PTO film is responsible for the domain structure [10][11][12][13][14][15]. However, it has been recently reported that the cooling process affects the ferroelectric properties; Pb (Zr, Ti) O 3 films (and related materials) with post-deposition quench cooling exhibit superior ferroelectric properties compared to films prepared using normal post-deposition cooling [16].…”

Section: Introductionmentioning

confidence: 99%

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In-situ Raman Spectroscopic Investigation of the Effect of Cooling Speed on Domain Formation in PbTiO₃ Films

Matsuoka¹,

Nishide²,

Tai³

et al. 2014

Integrated Ferroelectrics

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The influence of the post-deposition cooling speed on the domain formation process of PbTiO 3 films was investigated using MOCVD equipment combined with in-situ Raman spectroscopy. The accumulation and relaxation of strain during the post-deposition cooling process is responsible for the domain structure. The Curie temperature for fast cooling is lower than that for slow cooling. Additionally, the residual strain with fast cooling is smaller than that with slow cooling. These observations suggest that the volume fraction of the c-domain is larger for fast cooling and that the atmospheric conditions during the first post-deposition cooling process may control the domain structure.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

In-situ Raman Spectroscopic Investigation of the Effect of Cooling Speed on Domain Formation in PbTiO₃ Films

Matsuoka¹,

Nishide²,

Tai³

et al. 2014

Integrated Ferroelectrics

View full text Add to dashboard Cite

show abstract

Rapid and high sensitive structure evaluation of ferroelectric films using micro-Raman spectroscopy:In-situobservation of stress accumulation and release in PbTiO₃films during first cooling process

Cited by 1 publication

References 11 publications

In-situ Raman Spectroscopic Investigation of the Effect of Cooling Speed on Domain Formation in PbTiO₃ Films

In-situ Raman Spectroscopic Investigation of the Effect of Cooling Speed on Domain Formation in PbTiO₃ Films

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Rapid and high sensitive structure evaluation of ferroelectric films using micro-Raman spectroscopy:In-situobservation of stress accumulation and release in PbTiO3films during first cooling process

Cited by 1 publication

References 11 publications

In-situ Raman Spectroscopic Investigation of the Effect of Cooling Speed on Domain Formation in PbTiO3 Films

In-situ Raman Spectroscopic Investigation of the Effect of Cooling Speed on Domain Formation in PbTiO3 Films

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Rapid and high sensitive structure evaluation of ferroelectric films using micro-Raman spectroscopy:In-situobservation of stress accumulation and release in PbTiO₃films during first cooling process

In-situ Raman Spectroscopic Investigation of the Effect of Cooling Speed on Domain Formation in PbTiO₃ Films

In-situ Raman Spectroscopic Investigation of the Effect of Cooling Speed on Domain Formation in PbTiO₃ Films