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Investigations of the lattice dynamics of defects, such as oxygen vacancies, are important to understand the properties of PbTiO 3 and related materials. Herein polarized Raman spectra of epitaxial PbTiO 3 thin films with reduced and re-oxidized treatment were investigated. The oxygen-reduced spectrum displayed an additional mode related to oxygen vacancies, whereas the reoxidized spectrum was the same as the initial one. The oxygen vacancy content increases as the intensity of additional mode increases, while the intensity of the B 1 mode related to oxygen ions decreases. First-principles calculations of the phonon mode related to oxygen vacancies support the assignment of the additional mode.

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Sputtering damage of SrRuO 3 (SRO) films prepared by RF magnetron sputtering under various growth pressures was investigated by Raman spectroscopy and X-ray photoemission spectroscopy (XPS). Phonon modes that were related to Ru and Sr ions changed and XPS spectra shifted with decreasing growth pressure. These results indicate that Sr ions switched place with Ru ions in SRO films when the SRO films had sputtering damage under low-growth-pressure sputtering condition as determined from Raman spectroscopy and XPS measurement. The antisite ion content increased with decreasing growth pressure. The resistivity of the SRO films also increased with increasing antisite ion content. The dynamics of sputtering damage revealed that the antisite Sr and Ru ions were formed in SRO films.