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Marcinkevičius, Saulius; Gaarder, A.; León, R.

doi:10.1103/physrevb.64.115307

Cited by 28 publications

(18 citation statements)

References 27 publications

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“…In a similar form, it is for example calculated that the LO-phonon mediated electron relaxation in QDs is quite efficient both at 0 K and at 300 K [40,41,44]. This occurs for a wide energy detuning between the electronic energy level splitting and the LO phonon energy (tens of meV, in the order of the Rabi splittinghω R ), in agreement with experiments [43,45], thus relaxing the strict energy conservation of Fermi's golden rule. Recent experiments indeed indicate that in flat, truncated InGaAs/GaAs quantum dots a suppressed exciton relaxation occurs in qualitative agreement with the expectation from Fermi's golden rule [46].…”

Section: Exciton-phonon Interactionsupporting

confidence: 56%

Dephasing Processes and Carrier Dynamics in (In,Ga)As Quantum Dots

Borri

Langbein

2003

Topics in Applied Physics

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Abstract. In this contribution the dynamics of the optically induced interband polarization in (In,Ga)As/(Ga,Al)As quantum dots is reviewed, following the advances in the literature of the last ten years. Radiative recombination, excitonphonon interaction and Coulomb interaction of excitons with other carriers are discussed as mechanisms responsible of the excitonic dephasing in relation to their influence in the decay of the excitonic population. Following the recent progress in this area, the coherent non-linear light-matter interaction under strong light fields that results in optical Rabi oscillations of the excitonic population in quantum dots is also reviewed.

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Section: Exciton-phonon Interactionsupporting

confidence: 56%

Dephasing Processes and Carrier Dynamics in (In,Ga)As Quantum Dots

Borri

Langbein

2003

Topics in Applied Physics

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“…The dopant strength, dopant location, and the region over which the influence of the dopant is disseminated modulate the excitation rate with subtlety. Recently, there were some excellent experiments on carrier dynamics of doped quantum dot structures [46][47][48]. We hope that our findings could be practically exploited in designing impurity doped quantum dot devices for engineering applications.…”

Section: Discussionmentioning

confidence: 86%

Excitations in doped quantum dot driven by discontinuously and randomly reversing electric field: Influence of impurity

Datta¹,

Ghosh

2010

Chemical Physics

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“…The dopant strength, dopant location, and the region over which the influence of the dopant is disseminated [48,49]. We hope that our findings could be practically exploited in designing impurity doped quantum dot devices for engineering applications.…”

Section: Discussionmentioning

confidence: 89%