Undoped In0.53Ga0.47As epilayers were implanted with 2-MeV Fe+ ions at doses of 1×1015 and 1×1016 cm−2 at room temperature and annealed at temperatures between 500 and 800 °C. Hall-effect measurements show that after annealing, layers with resistivities on the order of 105 Ω/square can be achieved. Carrier lifetimes as short as 300 fs are observed for samples annealed at 500 and 600 °C. For higher annealing temperatures, characteristic times of the optical response are on the order of a few picoseconds.

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MeV P+ implanted and annealed p-InP, and Fe+ implanted and annealed semi-insulating InP have both been shown to produce the high resistivity, good mobility, and ultrafast optical response desired for ultrafast photodetectors. Hall effect measurements and time resolved photoluminescence were used to analyze the electrical and optical features of such implanted materials. Low temperature annealing was found to yield the fastest response times—130 fs for Fe+ implanted and 400 fs for P+ implanted InP, as well as resistivities of the order ∼106 Ω/square. It was found that the electrical activation of Fe-related centers, useful for achieving high resistivities in Fe+ implanted semi-insulating InP, was not fully realized at the annealing temperatures chosen to produce the fastest optical response. Implanting p-InP in the dose regime where type conversion occurs, and subsequent annealing at 500 °C, produces high resistivities and ultrafast carrier trapping times that are only marginally dose dependent.

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