Abstract:Ripple patterns formed on Pt(111) through grazing incidence ion beam erosion coarsen rapidly. At and below 450 K coarsening of the patterns is athermal and kinetic, unrelated to diffusion and surface free energy. Similar to the situation for sand dunes, coarsening takes place through annihilation reactions of mobile defects in the pattern. The defect velocity derived on the basis of a simple model agrees quantitatively with the velocity of monatomic steps illuminated by the ion beam.
“…Figure 7(a) and Figure 10(b)). This is in contrast to other experimental systems like Pt(111) surfaces under grazing incidence sputtering where rapid coarsening proceeds due to the annihilation of defects [109]. …”
Section: Morphology Of Ion-sputtered Si Surfacesmentioning
Nanopatterning of solid surfaces by low-energy ion bombardment has received considerable interest in recent years. This interest was partially motivated by promising applications of nanopatterned substrates in the production of functional surfaces. Especially nanoscale ripple patterns on Si surfaces have attracted attention both from a fundamental and an application related point of view. This paper summarizes the theoretical basics of ion-induced pattern formation and compares the predictions of various continuum models to experimental observations with special emphasis on the morphology development of Si surfaces during sub-keV ion sputtering.
“…Figure 7(a) and Figure 10(b)). This is in contrast to other experimental systems like Pt(111) surfaces under grazing incidence sputtering where rapid coarsening proceeds due to the annihilation of defects [109]. …”
Section: Morphology Of Ion-sputtered Si Surfacesmentioning
Nanopatterning of solid surfaces by low-energy ion bombardment has received considerable interest in recent years. This interest was partially motivated by promising applications of nanopatterned substrates in the production of functional surfaces. Especially nanoscale ripple patterns on Si surfaces have attracted attention both from a fundamental and an application related point of view. This paper summarizes the theoretical basics of ion-induced pattern formation and compares the predictions of various continuum models to experimental observations with special emphasis on the morphology development of Si surfaces during sub-keV ion sputtering.
“…For somewhat smaller ion incidence angles, most ions are still reflected in the forward direction and result in a distinct forward sputtering of initial topographic defects, especially at the upstream side of concave surface regions (depressions). The defect size grows in the direction of ion beam, probably accompanied by a guiding of ions along the defects, similar to the formation of perpendicular mode ripples on metallic surfaces at 83 • via a network of coalesced elongated vacancy islands [66,67].…”
Section: Role Of Surface-gradient-dependent Sputtering and Reflectionmentioning
“…20 This results in step arrays parallel to the beam and subsequent formation of ripples whose separation tend to increase with irradiation duration. 21 The studies reported here on TiO 2 are the first studies of this kind on a metal oxide. Previous studies of structure formation by grazing ion beams concentrated on metal surfaces [17][18][19]21,22 and ionic crystals such as CaF 2 ͑111͒ 15, 16 and KBr͑001͒.…”
Section: Introductionmentioning
confidence: 90%
“…21 The studies reported here on TiO 2 are the first studies of this kind on a metal oxide. Previous studies of structure formation by grazing ion beams concentrated on metal surfaces [17][18][19]21,22 and ionic crystals such as CaF 2 ͑111͒ 15, 16 and KBr͑001͒. 23 While the studies on Pt͑111͒ by the Michely group are comprehensive, the main question this present study addresses is if the same processes are applicable to more complex materials such as covalent/ionic bonded oxides, i.e., materials for which single-crystal wafers have potential applications, such as thin-film substrates.…”
The self-formation of metastable nanoripples by low-energy Ar + ions impacting at a grazing incidence angle on a TiO 2 ͑110͒ surface has been investigated by scanning tunneling microscopy. Ripple formation is a consequence of preferential sputtering of monatomic step edges with a directional component perpendicular to the ion-beam azimuth. The combination of preferential erosion of step edges and ion-beam-induced surface roughening results in a surface morphology with nanoripples aligned parallel to the ion-beam azimuth. We investigate the surface-structure evolution as a function of ion fluence for two ion-beam azimuth directions. Analysis of the formation and evolution of sputter-induced vacancy islands shows that under the conditions employed here ͑0.8 keV Ar ions, 8°grazing incidence angle͒ the sputter probability at step edges is significantly enhanced compared to sputtering at flat terraces. Although the initial vacancy island morphology can be strongly influenced by the step-edge formation energies for different crystallographic orientations, both investigated azimuth directions form similar ripple structures at high ion fluences. This study demonstrates that grazing incidence ion beams can be employed to pattern oxide substrates with quasiperiodic nanoripples with ripple spacing of tens of nanometer.
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