Rapid Degradation of WSi Self-Aligned Gate GaAs MESFET by Hot Carrier Effect

Reliability of compound semiconductor workshop historical review

“…This as undeed a -i itearstiog me hanis sne t s exaerbaed by by tcperatus a t east for oxide dielec rici e degradation is caused by inyact ionzat at the gae edg which meets hot carriers in the interfce between the semiconductor and insulator. These carriers effctevely expand the surface dpletion layer and reuce dss and gm wivhout much of ab harge to the thrshold votage 8) frlgmncaLat Compound semicondetour aie pezolectric 19…”

Hot Carrier Effect on Power Performance in GaAs PHEMT MMIC Power Amplifiers

“…Hot electron effects have been widely studied in either GaAs MESFET [1][2][3] or GaAs PHEMT [4] power amplifiers over the years. For GaAs PHEMT PAs under high RF-drive, high impact ionization gate current could be generated because transistors are subjected to high electric field.…”

Pulsed measurements and circuit modeling of a new breakdown mechanism of MESFETs and HEMTs

“…The first Igate=AIIDeXp(-B/(VDG+Vp)), represents the usual gate current as in [ 11, [2]; the second, Ib=(AzId+A31c)exp(-B/(Vdg+Vp)), corresponds to the holes which trigger the parasitic bipolar action, modeled as a bipolar transistor connected between drain and source. Figure 8 and 9 show the measured and simulated output characteristics.…”

“…When the devices are biased close to breakdown various type of degradation in devices performances are observed, such as decrease in the device input impedance and noise performances [ 11. Permanent degradation of device characteristics has been observed in MESFET [2,3], HEMTs [4,5], in pseudomorphic GaAs-based HEMTs [6] and in InP-based HEMTs [7,8]. This fact has strongly increased the interest on on-state and off-state breakdown phenomena and the need for a complete understanding of breakdown mechanisms.…”