The interfacial reaction products and stress distribution in a selective laser melted Al12Si/SiC composite are studied using confocal Raman microscopy. Results reveal that needle-like Al 4 C 3 and equiaxed Si are located at the interface between the Al matrix and SiC particles. This reaction is triggered by the high temperature within the SiC due to its high laser absorptivity. Raman frequency shifts to lower wavenumber are observed in both the SiC and Si, suggesting the existence of tensile stress within the interface. The tensile stress in SiC is higher in the build direction than in the direction perpendicular to the build direction. No such difference is observed in the Si. The reason is ascribed to the Gaussian distribution of the laser energy density and stress relief through the interfacial reaction.Aluminum metal matrix composites (AMMCs) are important engineering materials with high specific strength, excellent stiffness, tailorable thermal expansion coefficient, as well as enhanced electrical performance. [1] AMMCs have found structural and functional applications in many industries including aircraft, automotive, energy storage, as well as thermal management areas. [1] In processing of AMMCs, it is critical that the reinforcements disperse homogeneously into the Al matrix, as this plays a vital role [*] Dr.