Rapid growth of large area graphene on glass from olive oil by laser irradiation

Huang, Yihe; Sepioni, M.; Whitehead, David; Liu, Zhu; Guo, Wei; Zhong, Xiangli; Gu, Heng

doi:10.1088/1361-6528/ab7ef6

Cited by 10 publications

(6 citation statements)

References 38 publications

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“…The above results prove that few-layered graphene is almost fully covered on the surface of the sample. The quality of as-grown graphene, as well as the morphology of the surface of quenched Si wafer, was similar to that of graphene synthesized by laser direct writing [ 18 ].…”

Section: Resultsmentioning

confidence: 91%

“…Another recently reported method, laser direct writing, has shown the potential to achieve large area or patterned graphene by the heating effect of laser. LinLi’s team at Manchester University used laser irradiation to directly produce a large area graphene film with a size of about 3 cm 2 in 3–6 s on a glass substrate pre-coated with a 5–28-nm-thick Ni film covered with olive oil [ 18 ]. However, a high-power laser source of 16 kW was required to give a laser spot of 60 mm with uniformly distributed energy.…”

Section: Introductionmentioning

confidence: 99%

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Ultrafast Growth of Large Area Graphene on Si Wafer by a Single Pulse Current

Wang

et al. 2021

Molecules

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Graphene has many excellent optical, electrical and mechanical properties due to its unique two-dimensional structure. High-efficiency preparation of large area graphene film is the key to achieve its industrial applications. In this paper, an ultrafast quenching method was firstly carried out to flow a single pulse current through the surface of a Si wafer with a size of 10 mm × 10 mm for growing fully covered graphene film. The wafer surface was firstly coated with a 5-nm-thick carbon layer and then a 25-nm-thick nickel layer by magnetron sputtering. The optimum quenching conditions are a pulse current of 10 A and a pulse width of 2 s. The thus-prepared few-layered graphene film was proved to cover the substrate fully, showing a high conductivity. Our method is simple and highly efficient and does not need any high-power equipment. It is not limited by the size of the heating facility due to its self-heating feature, providing the potential to scale up the size of the substrates easily. Furthermore, this method can be applied to a variety of dielectric substrates, such as glass and quartz.

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Section: Resultsmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Ultrafast Growth of Large Area Graphene on Si Wafer by a Single Pulse Current

Wang

et al. 2021

Molecules

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“…Besides the CVD method, people are trying to develop other growth methods of graphene to meet the requirements to achieve real applications, including high efficiency, large sample size, and low cost, as well as the quality of graphene. The laser direct writing (LDW) ultrafast technique is one of the promising synthesis methods to produce graphene. ,− Lu et al . successfully obtained graphene patterns on insulating substrates by a femtosecond LDW process .…”

mentioning

confidence: 99%

“…Most recently, Lin Li et al . generated a much larger laser spot with a uniform power distribution using a powerful laser source to produce a graphene film with a size of about 3 cm 2 in 3–6 s on a glass substrate . The above ultrafast methods apparently improved the production rate of graphene films.…”

mentioning

confidence: 99%

“…Most recently, Lin Li et al generated a much larger laser spot with a uniform power distribution using a powerful laser source to produce a graphene film with a size of about 3 cm 2 in 3−6 s on a glass substrate. 40 The above ultrafast methods apparently improved the production rate of graphene films. However, a high-power pulse laser source was required for the production process, and the graphene sample size was actually limited by the laser spot size.…”

mentioning

confidence: 99%

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Ultrafast Growth of Highly Conductive Graphene Films by a Single Subsecond Pulse of Microwave

Wang

et al. 2022

ACS Nano

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Currently, graphene films are expected to achieve real applications in various fields. However, the conventional synthesis methods still have intrinsic limitations, especially not being applicable on a surface with high curvature. Herein, an ultrafast synthesis method was developed for graphene and turbostratic graphite growth by a single subsecond pulse of microwaves generated by a household magnetron. We succeeded in growing high-quality around 10-layered turbostratic graphite in 0.16 s directly on the surface of an atomic force microscope probe and maintaining a tip curvature radius of less than 30 nm. The thus-produced probes showed high conductivity and tip durability. Moreover, turbostratic graphite film was also demonstrated to grow on the surface of dielectric Si flat substrates in a full coverage. Graphene can also grow on metallic Ni tips by this method. Our microwave ultrafast method can be used to grow high-quality graphene in a facile, efficient, and economical way.

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Highly Efficient Growth of Large‐Sized Uniform Graphene Glass in Air by Scanning Electromagnetic Induction Quenching Method

Wang,

Chang,

et al. 2024

Adv Funct Materials

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The scalable, efficient, and cost‐economic preparation method of graphene is the key to promoting the real applications of graphene. In recent years researchers have made intensive efforts to enhance the synthesis efficiency and reduce the production costs of the manufacturing processes, especially for the chemical vapor deposition methods. However, the efficiency and uniformity are difficult to further improve due to its complicated synthesis conditions. A high‐efficiency synthesis method to provide a large uniform production area suitable for graphene growth remains a great challenge until now. In this work, a facile and scalable ultrafast quenching method for growing graphene in air is developed by using scanning electromagnetic induction (SEMI) equipment. This method is successfully applied to grow a 400 mm × 400 mm graphene glass within 2 min in the air with a lab‐grade instrument. Thus‐produced multiple‐layered graphene glass is of a high uniformity, film adhesion, and full coverage, showing a surface resistance (Rs) below 500 Ω sq−1. Outstanding electrothermal capabilities up to 1000 °C are demonstrated for their promising potential for transparent heating devices. The SEMI method, including the product size and growth rate, can be easily up‐scaled, which is believed to provide an effective route to grow graphene aiming at its real applications.

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Rapid growth of large area graphene on glass from olive oil by laser irradiation

Cited by 10 publications

References 38 publications

Ultrafast Growth of Large Area Graphene on Si Wafer by a Single Pulse Current

Ultrafast Growth of Large Area Graphene on Si Wafer by a Single Pulse Current

Ultrafast Growth of Highly Conductive Graphene Films by a Single Subsecond Pulse of Microwave

Highly Efficient Growth of Large‐Sized Uniform Graphene Glass in Air by Scanning Electromagnetic Induction Quenching Method

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