Ultrafast Growth of Large Area Graphene on Si Wafer by a Single Pulse Current

Ge, Yifei; Lu, Mingming; Wang, Jiahao; Xu, Jianxun; Zhao, Yuliang

doi:10.3390/molecules26164940

Cited by 4 publications

(2 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Graphene is grown on the Silicon using Chemical Vapour Deposition (CVD), and another Silicon layer is deposited at the top of graphene material. [45][46][47][48] The device structure is then rotated 90°where the source, drain and channel region are doped with a different concentration using ion implantation with proper masking. After completing the necessary doping of the regions using the ion implantation technique, a very thin film of high κ dielectric material is deposited.…”

Section: Device Architecture and Simulation Set-upmentioning

confidence: 99%

Sensitivity and Stability Analysis of Double-Gate Graphene Nanoribbon Vertical Tunnel FET for Different Gas Sensing

Liana¹,

Choudhuri²,

Bhowmick³

2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Sensing and detecting gases is crucial from the application point of view. The essential condition for present-time gas sensors is light, compact, less power dissipation, highly sensitive, thermally stable, and a good selection regarding several gases. Due to the significant potential and modulation of the energy band gap, two-dimensional materials have recently attracted researchers’ attention. Graphene nanoribbon (GNR) is one of the candidates from the two-D material; it is extracted from the strip of one-dimensional graphene material, which can be a suitable contender for gas sensing devices. Therefore, in this work, a detailed investigation of a gas sensor for various gases is reported by employing two-dimensional material-based DG-GNR VTFET as a sensor. Different gases, including Oxygen, Ammonia, and Hydrogen have been scrutinized for sensitivity and stability in several temperature ranges. In the present work, several catalytic metals are utilized in the gate electrode of the proposed device architecture for the different gas sensing applications. The intrinsic physics of the proposed gas sensor has been carried out in detail in the factor of different gas molecules and gas pressure. Finally, the temperature parameter varies to analyze the stability of the proposed device sensor within 200-400 K.

show abstract

Section: Device Architecture and Simulation Set-upmentioning

confidence: 99%

Sensitivity and Stability Analysis of Double-Gate Graphene Nanoribbon Vertical Tunnel FET for Different Gas Sensing

Liana¹,

Choudhuri²,

Bhowmick³

2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…It is costly to use such a facility for industrial production and is very difficult to scale up. In our previous research work, an ultrafast method was demonstrated for growing large-area graphene on Ni nanotips and Ni-coated Si substrates within 1–2 s by a single pulse current using a simple DC electrical source. , But the sample surface needed to be conductive and connected with two electrodes of an electrical circuit for sample quenching by Joule heat. Up to now, a versatile ultrafast method for graphene film growth remains a challenge.…”

mentioning

confidence: 99%

Ultrafast Growth of Highly Conductive Graphene Films by a Single Subsecond Pulse of Microwave

Wang

et al. 2022

ACS Nano

Self Cite

View full text Add to dashboard Cite

Currently, graphene films are expected to achieve real applications in various fields. However, the conventional synthesis methods still have intrinsic limitations, especially not being applicable on a surface with high curvature. Herein, an ultrafast synthesis method was developed for graphene and turbostratic graphite growth by a single subsecond pulse of microwaves generated by a household magnetron. We succeeded in growing high-quality around 10-layered turbostratic graphite in 0.16 s directly on the surface of an atomic force microscope probe and maintaining a tip curvature radius of less than 30 nm. The thus-produced probes showed high conductivity and tip durability. Moreover, turbostratic graphite film was also demonstrated to grow on the surface of dielectric Si flat substrates in a full coverage. Graphene can also grow on metallic Ni tips by this method. Our microwave ultrafast method can be used to grow high-quality graphene in a facile, efficient, and economical way.

show abstract

Highly Efficient Growth of Large‐Sized Uniform Graphene Glass in Air by Scanning Electromagnetic Induction Quenching Method

Wang,

Chang,

et al. 2024

Adv Funct Materials

View full text Add to dashboard Cite

The scalable, efficient, and cost‐economic preparation method of graphene is the key to promoting the real applications of graphene. In recent years researchers have made intensive efforts to enhance the synthesis efficiency and reduce the production costs of the manufacturing processes, especially for the chemical vapor deposition methods. However, the efficiency and uniformity are difficult to further improve due to its complicated synthesis conditions. A high‐efficiency synthesis method to provide a large uniform production area suitable for graphene growth remains a great challenge until now. In this work, a facile and scalable ultrafast quenching method for growing graphene in air is developed by using scanning electromagnetic induction (SEMI) equipment. This method is successfully applied to grow a 400 mm × 400 mm graphene glass within 2 min in the air with a lab‐grade instrument. Thus‐produced multiple‐layered graphene glass is of a high uniformity, film adhesion, and full coverage, showing a surface resistance (Rs) below 500 Ω sq−1. Outstanding electrothermal capabilities up to 1000 °C are demonstrated for their promising potential for transparent heating devices. The SEMI method, including the product size and growth rate, can be easily up‐scaled, which is believed to provide an effective route to grow graphene aiming at its real applications.

show abstract

Ultrafast Growth of Large Area Graphene on Si Wafer by a Single Pulse Current

Cited by 4 publications

References 27 publications

Sensitivity and Stability Analysis of Double-Gate Graphene Nanoribbon Vertical Tunnel FET for Different Gas Sensing

Sensitivity and Stability Analysis of Double-Gate Graphene Nanoribbon Vertical Tunnel FET for Different Gas Sensing

Ultrafast Growth of Highly Conductive Graphene Films by a Single Subsecond Pulse of Microwave

Highly Efficient Growth of Large‐Sized Uniform Graphene Glass in Air by Scanning Electromagnetic Induction Quenching Method

Contact Info

Product

Resources

About