Rapid growth of ultra thin SiO2 films by a large-area electron beam

Sun, De‐Zheng; Zhang, Yu; Li, F. M.; Du, Ying; Wang, H.

doi:10.1007/bf00617858

Cited by 5 publications

(1 citation statement)

References 13 publications

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“…Recent development of experimental techniques has enabled real time studies of solid–gas reactions approaching (or even reaching) the atomic scale. This has been clearly demonstrated, for instance, by time-resolved STM. , Significant success has been achieved in mechanistic studies by applying near-ambient pressure (NAP) XPS combined with ex situ TEM/EDX for catalytical systems. , However, all of these methods use a high energy beam/probe that unavoidably alters the system under study. − Although the information obtained is unique, it should be carefully analyzed with respect to its relevance or adequateness for the system under study.…”

Section: Introductionmentioning

confidence: 99%

Mechanistic Studies of Gas Reactions with Multicomponent Solids: What Can We Learn By Combining NAP XPS and Atomic Resolution STEM/EDX?

et al. 2019

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Rapid development of experimental techniques has enabled real time studies of solid−gas reactions at the level reaching the atomic scale. In the present paper, we focus on a combination of atomic resolution STEM/EDX, which visualizes the reaction zone, and near ambient pressure (NAP) XPS, which collects information for a surface layer of variable thickness under reaction conditions. We compare the behavior of two affined topological insulators, Bi 2 Te 3 and Sb 2 Te 3 . We used a simple reaction with molecular oxygen occurring at 298 K, which is of practical importance to avoid material degradation. Despite certain limitations, a combination of in situ XPS and ex situ cross-sectional STEM/EDX allowed us to obtain a self-consistent picture of the solid−gas reaction mechanism for oxidation of Sb 2 Te 3 and Bi 2 Te 3 crystals, which includes component redistribution between the oxide and the subsurface layer and Te segregation with formation of a thin ordered layer at the interface. The process is multistep in case of both compounds. At the very beginning of the oxidation process the reactivity is determined by the energy benefit of the corresponding element−oxygen bond formation. Further in the oxidation process, the behavior of these two compounds becomes similar and features component redistribution between the oxide and the subsurface layer.

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Section: Introductionmentioning

confidence: 99%

Mechanistic Studies of Gas Reactions with Multicomponent Solids: What Can We Learn By Combining NAP XPS and Atomic Resolution STEM/EDX?

et al. 2019

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Characterization of shallow implants with SIMS using electron-beam-assisted oxygen bombardment with oxygen backfill

Puga-Lambers

Holloway

1998

Surf. Interface Anal.

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Secondary ion mass spectrometry (SIMS) depth profiles of shallow implants of boron and arsenic in silicon have been measured. It was demonstrated that improved depth resolution was achieved at low (1.5 keV) beam energy for both O2+ and Cs+ beams. Oxygen backfill from the base pressure (10−10 Torr) to 10−6 Torr also improved the depth resolution. Simultaneous electron bombardment during oxygen backfill further improved the depth resolution, as measured both by the surface transients in the Si+ and SiO+ substrates as well as the B+ signal. The mechanism of improvement by electron bombardment during oxygen backfill was discussed and concluded to be electron‐beam‐stimulated oxidation of the Si surface. © 1998 John Wiley & Sons, Ltd.

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Rapid formation of ultra-thin dielectrics by Si surface modification using a large area low energy electron beam

Wang

et al. 1990

Vacuum

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Rapid growth of ultra thin SiO2 films by a large-area electron beam

Cited by 5 publications

References 13 publications

Mechanistic Studies of Gas Reactions with Multicomponent Solids: What Can We Learn By Combining NAP XPS and Atomic Resolution STEM/EDX?

Mechanistic Studies of Gas Reactions with Multicomponent Solids: What Can We Learn By Combining NAP XPS and Atomic Resolution STEM/EDX?

Characterization of shallow implants with SIMS using electron-beam-assisted oxygen bombardment with oxygen backfill

Rapid formation of ultra-thin dielectrics by Si surface modification using a large area low energy electron beam

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