Rapid laser-induced photochemical conversion of sol–gel precursors to In<sub>2</sub>O<sub>3</sub> layers and their application in thin-film transistors

Dellis, Spilios; Isakov, Ivan; Kalfagiannis, N.; Tetzner, Kornelius; Anthopoulos, Thomas D.; Koutsogeorgis, Demosthenes C.

doi:10.1039/c7tc00169j

Cited by 34 publications

(25 citation statements)

References 29 publications

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“…d) Transfer and output characteristics of In 2 O 3 TFTs with KrF excimer laser treatment and conventional thermal treatment. Reproduced with permission . Copyright 2017, Royal Society of Chemistry.…”

Section: Low‐temperature Technology For Various Layers Of Solution‐prmentioning

confidence: 99%

“…Research has been actively conducted to form solution‐processed oxide semiconductors at low‐temperatures using laser irradiation processes . Photoactivation with a laser enables selective processing of localized areas, delivering energy quickly and accurately.…”

Section: Low‐temperature Technology For Various Layers Of Solution‐prmentioning

confidence: 99%

“…Photoactivation with a laser enables selective processing of localized areas, delivering energy quickly and accurately. Koutsogeorgis and co‐workers demonstrated the use of a KrF excimer laser (10 pulses at 300 mJ cm −2 ), inducing a thermal budget of less than 150 °C to form a solution‐processed In 2 O 3 thin‐film at low‐temperatures . Through the laser annealing process, only the exposed region of the thin‐film shows semiconductor properties; the unexposed region shows insulating characteristics.…”

Section: Low‐temperature Technology For Various Layers Of Solution‐prmentioning

confidence: 99%

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A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

Park

Kang

Kim

2019

Adv Funct Materials

316

211

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Solution processing, including printing technology, is a promising technique for oxide thin-film transistor (TFTs) fabrication because it tends to be a costeffective process with high composition controllability and high throughput. However, solution-processed oxide TFTs are limited by low-performance and stability issues, which require high-temperature annealing. This high thermal budget in the fabrication process inhibits oxide TFTs from being applied to flexible electronics. There have been numerous attempts to promote the desired electrical characteristics of solution-processed oxide TFTs at lower fabrication temperatures. Recent techniques for achieving low-temperature (<350 °C) solution-processed and printed oxide TFTs, in terms of the materials, processes, and structural engineering methods currently in use are reviewed. Moreover, the core techniques for both n-type and p-type oxidebased channel layers, gate dielectric layers, and electrode layers in oxide TFTs are addressed. Finally, various multifunctional and emerging applications based on low-temperature solution-processed oxide TFTs are introduced and future outlooks for this highly promising research are suggested.

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Section: Low‐temperature Technology For Various Layers Of Solution‐prmentioning

confidence: 99%

Section: Low‐temperature Technology For Various Layers Of Solution‐prmentioning

confidence: 99%

Section: Low‐temperature Technology For Various Layers Of Solution‐prmentioning

confidence: 99%

See 1 more Smart Citation

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

Park

Kang

Kim

2019

Adv Funct Materials

316

211

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“…Stemming from the existing, well established, research regarding its application on conventional electronic materials, the implementation of LA in metal oxides has been continuously accompanying the evolution of novel materials and fabrication techniques over the past few decades. The remarkable characteristics of this promising annealing method match the high thermal energy demand of metal‐oxide thin‐film manufacturing, alongside other advantageous characteristics such as decreased processing time, compatibility with R2R and S2S printing techniques, low processing temperatures, precise energy delivery control, materials' selectivity, and direct patterning . Therefore, the introduction of LA in metal‐oxide‐based applications has offered improved optoelectronic characteristics, thus inspiring the next generation of (opto)electronic devices including TFTs, organic light emitting diodes OLEDs, sensors, capacitors, electrochromics, memory devices, and photovoltaics …”

Section: Laser Annealingmentioning

confidence: 99%

“…Following LA of the metal‐oxide sol–gel precursor with ns laser pulses, the subsequent energy absorption leads to a local temperature increase, which initiates the chemical transition to the desirable metal‐oxide phase . This photothermally induced chemical reaction differs from the photochemical phenomena occurring during fs LA, in which a rapid material ablation via instant bond breaking is induced, with limited temperature rise .…”

Section: Laser Annealingmentioning

confidence: 99%

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

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(1 of 37)high mobility (µ) (even in amorphous phase), wide bandgap (transparent in the visible range), and the ability to be controllably doped. Importantly, they can be grown into thin films and various nanostructures with different scalable deposition techniques, including vacuum-based methods such as physical vapor deposition (PVD) [7,8] and chemical vapor deposition (CVD) [9] as well as solution-based processes such as spray [10] and spin coating. [11] Moreover, the resulting layers can be easily patterned using standard fabrication procedures and as such can be integrated into state-of-the-art processes for (opto)electronic applications. The above-mentioned capabilities have led to a plethora of applications such as switching backplanes for displays, transparent and flexible electronics, integrated circuits (ICs), photovoltaics (PVs), organic light-emitting diodes (OLEDs), capacitors, batteries, photocatalytic devices, electrochromics and memory devices, to name but a few. [8,[12][13][14] Because of their ability to be doped, their electronic properties can be tuned from dielectrics to semiconductors and conductors. This characteristic versatility has recently been exploited to stretch the range of their applications to new technological sectors, such as plasmonics in the near infrared and midinfrared spectral ranges. [12,15] One of the driving applications of metal oxides is in thinfilm transistors (TFTs) for large area electronics such as current driven optical displays and ICs. Following the early demonstrations, [16] most effort focused on the fabrication and processing of metal oxides TFTs paying particular attention to the device performance and applications. [1,5,6,17] Especially when processed over large areas, as in the case for display applications, the complexity to precisely control the device reliability and reproducibility becomes a challenging aspect of any TFT technology. To that respect, solution-based techniques progressed rapidly due to their lower cost and higher throughput compared to vacuum-based techniques. In both cases, the metal-oxide deposition has so far been limited to high processing temperatures (>250 °C) (Figure 1a) which renders the technology incompatible with inexpensive, temperature-sensitive substrates such as polymers, the material class of choice for various high throughput manufacturing techniques such as roll-to-roll (R2R) and sheet-to-sheet (S2S)Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional hightemperature thermal annealing, offering rapid manufacturing times and compatibility with temperature-sensitive substrate materials among other potential advantages. Herein, recent advances in photonic processing paradigms of metal-oxide thin-film transistors (TFTs) are presented with particular emphasis on the use of various light sour...

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Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

et al. 2021

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over 80% in the visible light range. [2] ITO is widely used as essential transparent conducting electrodes in flat panel displays, touch screens, and solar cells. The global ITO market has an annual growth rate of 15% and is valued at 7 billion USD in 2019. In 2004, Nomura and Hosono et al. made great breakthrough in oxide thin film transistor (TFT) based on amorphous indium gallium zinc oxide (IGZO) grown at room temperature. [3] The amorphous IGZO showed an impressive mobility of 9 cm 2 V −1 s −1 , about 10 times of amorphous hydrogenated Si TFT which was used exclusively for displays at that time. Soon after Hosono's seminal work, IGZO TFT was commercialized by Sharp Corporation in 2012, and then rapidly expanded to mobile phones, tablets and laptops. [4] In 2019, the fifth generation IGZO TFT went to mass production, capable of driving large-area displays (85 in.) with ultrahigh 8 K resolution. [5] Moreover, oxide TFTs are also considered as the most promising transistors for next-generation curved, flexible, or even rollable electronics. [6] The great success of oxide semiconductors is underpinned by their unique electronic structure, amenability for n-type doping, as well as intrinsic stability. Oxide semiconductors have bandgap larger than 3 eV, enabling transparency in the visible spectrum. The conduction band (CB) of oxide semiconductors is typically composed of empty ns-orbitals (n ≥ 4) of heavy posttransition metals. The large, spherical ns-orbitals give rise to a high electron mobility even in amorphous phases, as well as high dopability for hosting a high density of electrons. Therefore, oxide semiconductors are amendable via doping to be a transparent semiconductor or a transparent conductor, depending on the purposes of device applications, e.g., TFT or ITO. However, there are two sides to every coin. The nature of electronic structure of oxide semiconductors also leads to the fundamental limitation of achieving p-type oxide semiconductors, which is exacerbated by the presence of a high background electron density arising from the formation of unintentional defects and impurities. [1a,7] The lack of p-type semiconductor significantly limits the great potential of oxide electronics. [7b] A high electron density and defect states cause detrimental effects on oxide TFT device performance, such as a high off-current, lower mobility, and instability issues. [8] In the past two decades, considerable research efforts have been made to understand the microscopic origin of defect states and background electrons Wide bandgap oxide semiconductors constitute a unique class of materials that combine properties of electrical conductivity and optical transparency. They are being widely used as key materials in optoelectronic device applications, including flat-panel displays, solar cells, OLED, and emerging flexible and transparent electronics. In this article, an up-to-date review on both the fundamental understanding of materials physics of oxide semiconductors, and recent research progress on design of new...

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Rapid laser-induced photochemical conversion of sol–gel precursors to In₂O₃ layers and their application in thin-film transistors

Cited by 34 publications

References 29 publications

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

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Rapid laser-induced photochemical conversion of sol–gel precursors to In2O3 layers and their application in thin-film transistors

Cited by 34 publications

References 29 publications

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

Contact Info

Product

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Rapid laser-induced photochemical conversion of sol–gel precursors to In₂O₃ layers and their application in thin-film transistors