No abstract

Excimer laser annealing (ELA) combined with combustion synthesis leads to high quality metal oxide TFTs in a short processing time.

We report the development of indium oxide (In 2 O 3 ) transistors via a single step laser-induced photochemical conversion process of a sol-gel metal oxide precursor. Through careful optimization of the laser annealing conditions we demonstrated successful conversion of the precursor to In 2 O 3 and its subsequent implementation in n-channel transistors with electron mobility up to 13 cm 2 /Vs. Importantly, the process does not require thermal annealing making it compatible with temperature sensitive materials such as plastic. On the other hand, the spatial conversion/densification of the sol-gel layer eliminates additional process steps associated with semiconductor patterning and hence significantly reduces fabrication complexity and cost. Our work demonstrates unambiguously that laser-induced photochemical conversion of sol-gel metal oxide precursors can be rapid and compatible with large-area electronics manufacturing.

In this work, the synthesis of long, single-crystal nickel nanowires (NWs) using dc electrodeposition is reported. Porous alumina membranes with 220 nm mean pore diameter were used as a template. This diameter is much larger than what is usually reported in single crystal NWs synthesis. The dependence of the NW crystal structure upon applied voltage as well as the change in crystal structure along the NW's length is also investigated. Finally, in order to get sufficient understanding of the present results, a model based on two competing growth mechanisms is proposed, revealing the dependence of crystal structure upon the voltage applied during the electrodeposition process.