Rapid Microwave-Only Characterization and Readout of Quantum Dots Using Multiplexed Gigahertz-Frequency Resonators

Jong, Damaz de; Prosko, Christian; Waardenburg, Daan; Lin, Han; Malinowski, Filip K.; Krogstrup, Peter; Kouwenhoven, Leo P.; Koski, Jonne; Pfaff, Wolfgang

doi:10.1103/physrevapplied.16.014007

Cited by 21 publications

(14 citation statements)

References 59 publications

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“…Single [225,228] , double [229,230] , and multi-QD devices [231] have been realized in InSb/As nanowires, and a spin-orbit qubit in an InSb NW QD was demonstrated with fast Rabi oscillations (104 MHz) and a coherence time up to ~35 ns [226] . Coupling of In-V NWs to superconducting microcavities has been demonstrated [212,229,232] . Fig.…”

Section: In-v Nwsmentioning

confidence: 99%

“…[220] Panel (d.) adapted from ref. [232] Panels (e, f, and g) reprinted from ref. [239] 3.0.0 Spin Qubits in Defects Spin defects in wide-bandgap crystals are a promising system for qubits in quantum computation, quantum networks, and quantum sensing.…”

Section: Carbon Nanotubes (Cnts)mentioning

confidence: 99%

“…Panel (c.) adapted from ref [220]. Panel (d.) adapted from ref [232]. Panels (e, f, and g) reprinted from ref [239].…”

mentioning

confidence: 99%

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Nanomaterials for Quantum Information Science and Engineering

et al. 2022

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Quantum information science and engineering (QISE) which entails generation, control and manipulation of individual quantum mechanical states together with nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid state devices for QISE have, to this point, predominantly been designed with bulk material as their constituents. In this review, we consider how nanomaterials or low-dimensional materials i.e. materials with intrinsic quantum confinement -may offer inherent advantages over conventional materials for QISE. We identify the materials challenges for specific types of qubits, and we identify how emerging nanomaterials may overcome these challenges. Challenges for and progress towards nanomaterials-based quantum devices are identified. We aim to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.

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Section: In-v Nwsmentioning

confidence: 99%

Section: Carbon Nanotubes (Cnts)mentioning

confidence: 99%

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Nanomaterials for Quantum Information Science and Engineering

et al. 2022

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“…These include arrays of NW diodes [10] and NW field effect transistors [11] for probing THz radiation, [12,13] as well as NW quantum dot (QD) systems coupled to superconducting resonators. [14][15][16] NW QDs -can be realized electrostatically using gate electrodes [17][18][19][20] to control tunnel barriers and chemical potentials in the dots, resulting in zero dimensional systems with relatively large dot size and weak confinement owing to the small energy distance among quantum confined energy levels. These systems can be relatively easily exploited for MW emission [21,22] and detection down to single photons.…”

Section: Introductionmentioning

confidence: 99%

Calibration‐Free and High‐Sensitivity Microwave Detectors Based on InAs/InP Nanowire Double Quantum Dots

Cornia

Demontis

Zannier

et al. 2023

Adv Funct Materials

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At the cutting‐edge of microwave detection technology, novel approaches which exploit the interaction between microwaves and quantum devices are rising. In this study, microwaves are efficiently detected exploiting the unique transport features of InAs/InP nanowire double quantum dot‐based devices, suitably configured to allow the precise and calibration‐free measurement of the local field. Prototypical nanoscale detectors are operated both at zero and finite source‐drain bias, addressing and rationalizing the microwave impact on the charge stability diagram. The detector performance is addressed by measuring its responsivity, quantum efficiency and noise equivalent power that, upon impedance matching optimization, are estimated to reach values up to ≈2000 A W−1, 0.04 and ≈10−16normalW/Hz${10^{ - 16}}{\rm{W}}/\sqrt {Hz} $, respectively. The interaction mechanism between the microwave field and the quantum confined energy levels of the double quantum dots is unveiled and it is shown that these semiconductor nanostructures allow the direct assessment of the local intensity of the microwave field without the need for any calibration tool. Thus, the reported nanoscale devices based on III‐V nanowire heterostructures represent a novel class of calibration‐free and highly sensitive probes of microwave radiation, with nanometer‐scale spatial resolution, that may foster the development of novel high‐performance microwave circuitries.

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“…However, scalable qubit devices [19,20] may favor characterization methods that do not require transport measurements. Here, we explore dispersive gate sensing (DGS) [8,[21][22][23][24][25][26] to characterize SOI, especially the B SO orientation. Our protocol does not employ transport measurements, is compatible with fast data acquisition in rastering schemes [23,27], and is promising for the integration of qubit characterization and readout capabilities [28,29].…”

mentioning

confidence: 99%

Variable and orbital-dependent spin-orbit field orientations in a InSb double quantum dot characterized via dispersive gate sensing

Lin¹,

Chan²,

Jong³

et al. 2022

Preprint

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Utilizing dispersive gate sensing (DGS), we investigate the spin-orbit field (BSO) orientation in a many-electron double quantum dot (DQD) defined in an InSb nanowire. While characterizing the inter-dot tunnel couplings, the measured dispersive signal depends on the electron charge occupancy, as well as on the amplitude and orientation of the external magnetic field. The dispersive signal is mostly insensitive to the external field orientation when a DQD is occupied by a total odd number of electrons. For a DQD occupied by a total even number of electrons, the dispersive signal is reduced when the finite external magnetic field aligns with the effective BSO orientation. This fact enables the identification of BSO orientations for different DQD electron occupancies. The BSO orientation varies drastically between charge transitions, and is generally neither perpendicular to the nanowire nor in the chip plane. Moreover, BSO is similar for pairs of transitions involving the same valence orbital, and varies between such pairs. Our work demonstrates the practicality of DGS in characterizing spin-orbit interactions in quantum dot systems, without requiring any current flow through the device.

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Rapid Microwave-Only Characterization and Readout of Quantum Dots Using Multiplexed Gigahertz-Frequency Resonators

Cited by 21 publications

References 59 publications

Nanomaterials for Quantum Information Science and Engineering

Nanomaterials for Quantum Information Science and Engineering

Calibration‐Free and High‐Sensitivity Microwave Detectors Based on InAs/InP Nanowire Double Quantum Dots

Variable and orbital-dependent spin-orbit field orientations in a InSb double quantum dot characterized via dispersive gate sensing

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