Rapid photonic curing of solution-processed In2O3 layers on flexible substrates

Twyman, Nicholas M.; Tetzner, Kornelius; Anthopoulos, Thomas D.; Payne, David J.; Regoutz, Anna

doi:10.1016/j.apsusc.2019.02.038

Cited by 25 publications

(20 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The dominant peak between 531.5 and 530.5 eV is attributed to metal–oxygen–metal bonds, [ 28,29 ] while the 2nd and 3rd peaks can be assigned to hydroxide and nitrate groups inside the thin film, respectively. [ 30 ] As spun films dried at 130 °C show higher amounts of hydroxide groups in Al 2 O 3 , and both hydroxide and nitrate for In 2 O 3 layers, respectively. Upon flashing all oxide precursor layers show‐reduced intensities in the corresponding metal–hydroxide and oxygen–nitrate peaks accompanied by increased metal–oxygen signal intensities.…”

Section: Resultsmentioning

confidence: 99%

“…Due to the different thermal properties of PEN to those of glass, the possible thermal stress is more pronounced given the same flashing parameters. This problem could be overcome by insertin g a buffer layer, such as SiO 2 or polyimide (PI), [ 30 ] between substrate and metal or the tuning of flashing parameters for the temperature sensitive substrates. However, the insertion of such buffer layer increases fabrication complexity as it requires an extra fabrication step and for this reason, it was not pursued here.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Low‐Voltage Heterojunction Metal Oxide Transistors via Rapid Photonic Processing

Yarali

Faber

Yengel

et al. 2020

Adv Elect Materials

Self Cite

View full text Add to dashboard Cite

Solution‐processed metal oxide thin‐film transistors (TFTs) represent a promising technology for applications in existing but also emerging large‐area electronics. However, high process temperatures and lengthy annealing times represent two remaining technical challenges. Different approaches aiming to address these challenges have been proposed but progress remains modest. Here, the development of high electron mobility metal oxide TFTs based on photonically converted Al2O3/ZrO2 and In2O3/ZnO bilayers acting as the high‐k dielectric and electron‐transporting channel, respectively is described. Sequential solution‐phase deposition and photonic processing lead to low substrate temperature (<200 °C) while minimizing the overall process time to less than 60 s without compromising the quality of the formed layers. The bilayer Al2O3/ZrO2 dielectric exhibits low leakage current density (10−6 A cm−2 at 1 MV cm−1), high geometric capacitance (≈120 nF cm−2) and breakdown electric field of ≈1 MV cm−1. Combining Al2O3/ZrO2 with a photonically converted In2O3/ZnO heterojunction channels, results in TFTs with high electron mobility (19 cm2 V−1 s−1), low operation voltage (≤2 V), high current on/off ratio (>106), and low subthreshold swing (108 mV dec−1), that can be manufactured even onto thermally sensitive polymer substrates. The work is a significant step toward all‐photonic processed metal oxide electronics.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Low‐Voltage Heterojunction Metal Oxide Transistors via Rapid Photonic Processing

Yarali

Faber

Yengel

et al. 2020

Adv Elect Materials

Self Cite

View full text Add to dashboard Cite

show abstract

“…Thus, these processes cannot be directly transferred to flexible plastic substrates. On flexible substrates, photonic curing of IGZO thin film transistors has been demonstrated only in combination with high-temperature thermal annealing on polyimide 47 , and In 2 O 3 films on PEN with a thick polyimide intermediate layer have been evaluated through materials characterization but without device evaluation 48 . PSC fabricated on photonically cured TiO 2 transport layers on flexible PET substrates have been demonstrated, but show lower performance compared with those on TiO 2 annealed at high temperature on rigid substrates 49,50 .…”

Section: Introductionmentioning

confidence: 99%

Photonic curing of solution-deposited ZrO2 dielectric on PEN: a path towards high-throughput processing of oxide electronics

Daunis

Schroder²,

Hsu

2020

npj Flex Electron

View full text Add to dashboard Cite

High-throughput manufacturing of oxide electronics will enable new applications ranging from large-area displays to flexible medical devices and low-cost solar panels. However, high-quality oxide films from solution-based precursors typically require 20 min or more of thermal annealing at high temperature (>250°C) for each layer, severely limiting both the throughput and substrate choice. Here, we report high-speed photonic curing of ZrO 2 dielectric thin films on flexible plastic substrates. The curing and patterning processes can be achieved simultaneously by using shadow mask patterning or adjusting conditions to convert oxide only on top of underlying metal contacts, i.e. self-aligned patterning. Metal-insulator-metal capacitors using two layers of ZrO 2 films photonically cured in just 100 s per layer show non-dispersive capacitance-frequency behaviour from 10 2 to 10 6 Hz, high areal capacitance of 200 nF/cm 2 and low dissipation factor of 0.03 at 10 5 Hz, leakage current density of~10 −7 A/cm 2 at an applied field of 2 MV/cm, and a breakdown field of nearly 8 MV/cm. Using an upgraded tool, similar dielectric properties are achieved in as short as 100 ms using a single pulse of light, revealing a pathway to oxide film processing beyond 30 m/min.

show abstract

“…Additionally, due to the low temperatures employed and the presence of solvents, the structures produced by these techniques tend to show worse performance when compared to similar structures processed by vacuum techniques. To solve this issue, photonic curing approaches that reduce the thermal stress on the substrates have also been proposed [17,343]. Regarding materials that cannot be directly grown or deposited on flexible substrates, such as SiNMs, polymer assisted transfer processes were also demonstrated [219].…”

Section: Fabrication Methodsmentioning

confidence: 99%

Flexible Sensors—From Materials to Applications

et al. 2019

View full text Add to dashboard Cite

Flexible sensors have the potential to be seamlessly applied to soft and irregularly shaped surfaces such as the human skin or textile fabrics. This benefits conformability dependant applications including smart tattoos, artificial skins and soft robotics. Consequently, materials and structures for innovative flexible sensors, as well as their integration into systems, continue to be in the spotlight of research. This review outlines the current state of flexible sensor technologies and the impact of material developments on this field. Special attention is given to strain, temperature, chemical, light and electropotential sensors, as well as their respective applications.

show abstract

Rapid photonic curing of solution-processed In2O3 layers on flexible substrates

Cited by 25 publications

References 31 publications

Low‐Voltage Heterojunction Metal Oxide Transistors via Rapid Photonic Processing

Low‐Voltage Heterojunction Metal Oxide Transistors via Rapid Photonic Processing

Photonic curing of solution-deposited ZrO2 dielectric on PEN: a path towards high-throughput processing of oxide electronics

Flexible Sensors—From Materials to Applications

Contact Info

Product

Resources

About