Rapid Recrystallization of Amorphous Silicon Utilizing Very-High-Frequency Microplasma Jet at Atmospheric Pressure

Abstract

The absolute flux of a femtosecond vacuum-ultraviolet (VUV) photon source based on the high-order harmonic generation of a femtosecond Ti:sapphire laser and monochromatized with a grating monochromator is determined both on a shot-to-shot basis and averaged over seconds by a calibrated gas monitor detector. The average flux is compared with the average flux as determined with a calibrated GaAsP semiconductor photodiode. We found that the photodiode is a reliable and easy-to-use tool for estimating the order of magnitude of the average photon flux but that, due to saturation losses, it underestimates the average flux by up to −15%.

Rapid Atmospheric Pressure Plasma Jet Processed Reduced Graphene Oxide Counter Electrodes for Dye-Sensitized Solar Cells

“…Atmospheric pressure plasma technology is advantageous in versatile applications including surface modification, rapid thermal annealing, thin-film deposition, bacteria inactivation, and rapid sintering processes. ,− Atmospheric pressure plasma jet (APPJ) processes involve the reaction chemistry in the nonthermal plasmas; the participation of oxygen atoms in the plasmas can effectively remove organics by oxidation, rendering rapid processing capability. ,, In addition, it is a nonvacuum process that is compatible with large-area and roll-to-roll fabrication. , Atmospheric pressure plasmas (APPs) have been used in many aspects of solar cell fabrication. A 30 min radio frequency (rf) APP has been used for the preparation of TiO 2 photoanodes of on-plastic DSSCs .…”

“…Improved performance of DSSCs with TiO 2 treated by atmospheric-pressure nonequilibrium direct current (DC) pulse discharge plasma jet , and DBD-treatment have been demonstrated. Atmospheric pressure plasma TiO 2 coating was also suggested for the protection layer of plastic substrates for DSSCs. , In addition to the application of nonthermal-equilibrium plasmas to solar cell fabrication, some thermal-plasma techniques have been used for the annealing of ZnO:Al films and recrystallization of amorphous Si for Si thin-film solar cells. ,, …”

Inductively Coupled Plasma Sources and Applications

“…Recently developed has been rapid thermal processing (RTP) for thin films, in which an ICP torch is used as a heat source. The ICP torch is scanned at high speed, and polycrystalline silicon film can be acquired by heating the α-Si film over a very short period of time, on the order of ms [30]. This process has advantages of lower tool costs and lower operating costs compared to laser annealing, with further improvements expected in the future.…”

Annealing performance improvement of elongated inductively coupled plasma torch and its application to recovery of plasma-induced Si substrate damage

“…It has been reported that the ICP torch enables a-Si film crystallization. 34,35) The ICP torch is capable of large-area processing if an elongated thermal plasma is generated. Since the ICP torch uses no electrodes, there is no need to worry about contamination and heat source fluctuation.…”