Rapid recrystallization of amorphous silicon utilizing the plasma jet at atmospheric pressure

Sakurai, Yusuke; Yeo, Mina; Shirai, Hajime; Kobayashi, Tomohiro; Hasegawa, Yasuhiro

doi:10.1016/j.jnoncrysol.2006.01.051

Cited by 6 publications

(3 citation statements)

References 6 publications

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“…It was previously reported that a VHF power supply can generate high-density plasma at atmospheric pressure plasma [3,4] . VHF plasma in atmospheric ambient can rapidly and effectively crystallize a-Si films [5,6] since a high plasma density enables an extremely high polycrystalline rate at relatively low temperatures [7] . A high-frequency 150 MHz power supply makes it possible to generate high-density atmospheric pressure and avoid ion bombardment of the film [8] .…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of VHF Effects on Densities of Important Species for Silicon Film Deposition at Atmospheric Pressure

Juan¹,

Sun²,

Sang³

et al. 2012

Plasma Sci. Technol.

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The characteristics of homogeneous discharges in mixed gases of hydrogen diluted silane and argon at atmospheric pressure are investigated numerically based on a one-dimensional fluid model. This model takes into account the primary processes−excitation and ionization, sixteen reactions of radicals with radicals in silane/hydrogen/argon discharges−and therefore, can adequately represent the discharge plasma. We analyze the effects of very high frequency (VHF) on the densities of species (e, H, SiH3, SiH + 3 and SiH2) in such discharges using the model. The simulation results show that the densities of SiH3, SiH + 3 , H, and SiH2 increase with VHF when the VHF ranges from 30 MHz to 150 MHz. It is found that the deposition rate of µc-Si:H film depends on the concentration of SiH3, SiH + 3 , SiH2, and H in the plasma. The effects of VHF on the deposition rate and the amount of crystallized fraction for µc-Si:H film growth is also discussed in this paper.

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Section: Introductionmentioning

confidence: 99%

Numerical Simulation of VHF Effects on Densities of Important Species for Silicon Film Deposition at Atmospheric Pressure

Juan¹,

Sun²,

Sang³

et al. 2012

Plasma Sci. Technol.

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“…However, the limit to the output power of the laser results in difficulties for large area fabrication of high‐quality poly‐Si TFTs. As an alternative method for the crystallization technique, we have demonstrated that the crystallization of a‐Si utilizing atmospheric pressure microplasma jet (MPJ) and radio‐frequency (rf) thermal plasma torch (TPT) 6, 7. The field‐effect mobilities of TFTs with top‐ and bottom‐gate structures exhibited 55 and 32 cm 2 /Vs, respectively, with threshhold voltages of 2–3 V. However, the crystallization mechanism in a millisecond time domain is still a matter of research.…”

Section: Introductionmentioning

confidence: 99%

Real time monitoring of the crystallization process during the plasma annealing of amorphous silicon

Ohta

Imamura

Shimizu

et al. 2010

Physica Status Solidi (a)

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The transient surface temperature and optical transmissivity profiles during the plasma annealing of amorphous silicon (a-Si) on quartz substrate was studied using a radio-frequency (rf) thermal plasma torch (TPT). The film crystallization promoted through solid-phase crystallization (SPC) at surface temperature of 750 8C, followed by a lateral crystalline grain growth at above 900 8C within millisecond time domain. The spectroscopic ellipsometry study revealed that the film crystallization by a TPT annealing promoted from near the bottom surface due to the sufficient thermal storage in the bulk rather than the top surface. The average crystalline grain size extended to 200-300 nm by adjusting the stage velocity and substrate distance.

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“…However, the limit of the homogeneity, uniformity and stability of the each laser pulse intensity lead to difficulties for large area fabrication of high quality poly-Si TFTs. As an alternative method for the crystallization technique, we have demonstrated that the crystallization of a-Si utilizing atmospheric pressure thermal plasma torch (TPT) with a tube diameter ranging from 1 to 10 mm (6,7). However, the crystallization mechanism is still controversial.…”

Section: Introductionmentioning

confidence: 99%

Crystallization Process of Amorphous Silicon Utilizing A Radio Frequency Thermal Plasma Torch

Ota¹,

Haruta²,

Shimizu³

et al. 2009

ECS Trans.

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The crystallization mechanism of hydrogenated amorphous silicon (a-Si:H)has been studied through the real time monitoring of the surface temeparture, transmittance and reflectance (T/R) profiles during the plasma annealing utilizing an rf thermal plasma torch. The correlation among the surface temperature profile, T/R, and film fine structure is discussed. The film crystallization proceeds through the solid phase crystallization followed with the grain growth due to the coalescence of small crystalline grains.

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Rapid recrystallization of amorphous silicon utilizing the plasma jet at atmospheric pressure

Cited by 6 publications

References 6 publications

Numerical Simulation of VHF Effects on Densities of Important Species for Silicon Film Deposition at Atmospheric Pressure

Numerical Simulation of VHF Effects on Densities of Important Species for Silicon Film Deposition at Atmospheric Pressure

Real time monitoring of the crystallization process during the plasma annealing of amorphous silicon

Crystallization Process of Amorphous Silicon Utilizing A Radio Frequency Thermal Plasma Torch

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