Real time monitoring of the crystallization process during the plasma annealing of amorphous silicon

Ohta, Nobuyoshi; Imamura, Takashi; Shimizu, Hirokazu; Kobayashi, Tomohiro; Shirai, Hajime

doi:10.1002/pssa.200982720

Cited by 2 publications

(1 citation statement)

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“…The quartz tube-substrate to substrate spacing was 15 mm. The surface temperature profiles during TPJ annealing was monitored using a non-contact thermometry [16].…”

Section: Methodsmentioning

confidence: 99%

Rapid thermal annealing of sputter-deposited ZnO:Al films for microcrystalline Si thin-film solar cells

et al. 2012

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Rapid thermal annealing of sputter-deposited ZnO and Al-doped ZnO (AZO) films with and without an amorphous silicon (a-Si) capping layer was investigated using a radio-frequency (rf) argon thermal plasma jet of argon at atmospheric pressure. The resistivity of bare ZnO films on glass decreased from 10 8 to 10 4 -10 5 Ω cm at maximum surface temperatures Tmaxs above 650• C, whereas the resistivity increased from 10 −4 to 10 −3 -10 −2 Ω cm for bare AZO films. On the other hand, the resistivity of AZO films with a 30-nm-thick a-Si capping layer remained below 10 −4 Ω cm, even after TPJ annealing at a Tmax of 825• C. The film crystallization of both AZO and a-Si layers was promoted without the formation of an intermixing layer. Additionally, the crystallization of phosphorous-and boron-doped a-Si layers at the sample surface was promoted, compared to that of intrinsic a-Si under the identical plasma annealing conditions. The TPJ annealing of n + -a-Si/textured AZO was applied for single junction n-i-p microcrystalline Si thin-film solar cells.

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“…The quartz tube-substrate to substrate spacing was 15 mm. The surface temperature profiles during TPJ annealing was monitored using a non-contact thermometry [16].…”

Section: Methodsmentioning

confidence: 99%