Rapid Reversible Degradation of Silicon Thin Films by a Treatment in Water

Turan, E.; Yilmaz, Gökhan; Smirnov, Vladimir; Finger, F.; Güneş, Mehmet

doi:10.1143/jjap.51.070210

Cited by 3 publications

(2 citation statements)

References 13 publications

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“…In addition, high purity oxygen gas treatment was performed in high vacuum cryostat at 80°C. In addition, deionized water at 80°C was used for faster and effective creation of reversible and irreversible changes in samples deposited on rough glass [14]. Annealing was carried out at 430 K in high vacuum of 2-3 × 10 −6 mbar.…”

Section: Methodsmentioning

confidence: 99%

Investigation of meta- and in-stability effects in hydrogenated microcrystalline silicon thin films by the steady-state measurement methods

et al. 2014

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Metastability effects because of atmospheric exposure, high purity gasses, and deionized water in hydrogenated microcrystalline silicon thin films with different crystalline volume fractions were studied using well accepted steady-state characterization methods of dark conductivity, steady-state photoconductivity, steady-state photocarrier grating (SSPG) and dual beam photoconductivity (DBP) methods. A standard measurement procedure has been established before using the steady state methods, in which a steady state condition of dark conductivity was established by monitoring the time dependence of dark conductivity. Samples deposited on smooth glass and rough glass substrates exhibit similar reversible and irreversible changes in the properties of microcrystalline silicon film. A reliable correlation of reversible and irreversible changes indicate that dark conductivity and photoconductivity values increase, sub-bandgap absorption spectrum obtained from DBP method decrease and correspondingly minority carrier diffusion lengths obtained from the SSPG method increase in the metastable state in various amount for microcrystalline films with crystalline volume fraction, I C RS > 0.30. Amorphous silicon and microcrystalline silicon films with I C RS < 0.30 do not show detectable metastable changes as samples exposed to atmospheric condition as well as high purity oxygen gas and deionized water.Résumé : Nous utilisons des méthodes de caractérisation stationnaire bien acceptées, comme la conductivité en obscurité, la photoconductivité stationnaire, la photoconductivité stationnaire par interférométrie laser (SSPG) et la photoconductivité modulée à deux faisceaux (DBP), afin d'étudier l'effet de la métastabilité dans des films minces de silicium microcristallin hydrogénés, suite à l'exposition à l'atmosphère, aux gaz de haute pureté et à l'eau dé-ionisé. Avant d'utiliser ces méthodes stationnaires, nous avons développé une procédure standard de mesure, dans laquelle la condition stationnaire de conductivité en obscurité est vérifiée en observant la dépendance en temps de la conductivité en obscurité. Les échantillons déposés sur des surfaces douces et rudes de substrats de verre montrent les mêmes changements réversibles et irréversibles dans les propriétés microcristallines des films de silicium. Une corrélation fiable des changements réversibles et irréversibles des propriétés des films microcristallins indique que les valeurs de conductivité en obscurité et de photoconductivité augmentent et que le spectre d'absorption sous la bande interdite obtenu de SSPG augmente dans les films microcristallins en état métastable pour lesquels la fraction cristalline en volume I C RS > 0.3. Les films de silicium amorphes et microcristallins avec I C RS < 0.3 ne montrent aucun changement métastable détectable lorsque les échantillons sont exposés aux conditions atmosphériques, à l'oxygène pur et à l'eau dé-ionisée. [Traduit par la Rédaction]

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Section: Methodsmentioning

confidence: 99%

Investigation of meta- and in-stability effects in hydrogenated microcrystalline silicon thin films by the steady-state measurement methods

et al. 2014

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“…[4, 6,13,14,[16][17][18][19][20][21]. Nano ya da mikro kristal silisyumlarda oluşan bu elektronik bozunmalar tamamen geri dönüşümlü olabildiği gibi kısmi ya da tamamen geri dönüşümsüz etkiler de oluşturduğu literatüre rapor edilmiştir [6,13,14,19,20,22,[26][27][28][29].…”

Section: Introductionunclassified

Silisyum İnce Filmlerde Taban Malzemelerin Elektronik Kusurlar Üzerine Etkisinin Belirlenmesi

Yılmaz

2022

Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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Silisyum ince filmlerin taban malzeme ve üretim koşullarına bağlı olarak kristal hacim oranları değişmektedir. Kristal hacim oranlarındaki bu farklılık ince filmlerin yasak enerji aralığında bulunun elektronik kusur çeşitlerini de etkilemektedir. Silisyum ince filmlerde atmosferik koşullardan ya da uzun süre ışığa maruz kalmalarından kaynaklı olarak elektronik kusurlar oluşmaktadır. Elektronik kusurların değişimine bağlı olarak iletkenlik değerlerinde değişimler oluşmaktadır. Bu çalışmada PECVD tekniği kullanılarak aynı anda üç farklı taban malzeme üzerine silisyum ince filmler büyütülmüştür. Büyütülen filmlerin kristal hacim oranları Raman Spektroskopisi ile yüzey morfolojileri ise taramalı elektron mikroskobu (SEM) yöntemi ile belirlenmiştir. Büyütülen silisyum ince filmler farklı atmosferik koşullara ( laboratuvar atmosferi, ışık banyosu ve UV ışık yaşlandırmasına) maruz bırakılarak bilinçli bir şekilde ince filmlerin yapısında elektronik kusurlar oluşturulmuştur. Bu kusurların davranışı elektriksel iletkenlik yöntemleri olan zamana bağlı karanlık iletkenlik, fotoiletkenlik ve mobilite-yaşam süresi hesaplamaları ile incelenmiştir. Elde edilen bulgular sonucunda taban malzemelerin farklı olmasından kaynaklı malzemelerin kristal hacim oranlarında ve kalınlıklarında belirgin farklılıklar oluştuğu ve bu farklılıklardan kaynaklı olarak malzemelerin aynı atmosferik koşullarda farklı elektronik kusur durumlarından etkilendikleri belirlenmiştir.

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The effects of air, oxygen and water exposure on the sub-bandgap absorption, the electronic conductivity and the ambipolar diffusion length in highly crystalline microcrystalline silicon films for photovoltaic applications

Güneş

Smirnov

Finger

et al. 2020

J Mater Sci: Mater Electron

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Rapid Reversible Degradation of Silicon Thin Films by a Treatment in Water

Cited by 3 publications

References 13 publications

Investigation of meta- and in-stability effects in hydrogenated microcrystalline silicon thin films by the steady-state measurement methods

Investigation of meta- and in-stability effects in hydrogenated microcrystalline silicon thin films by the steady-state measurement methods

Silisyum İnce Filmlerde Taban Malzemelerin Elektronik Kusurlar Üzerine Etkisinin Belirlenmesi

The effects of air, oxygen and water exposure on the sub-bandgap absorption, the electronic conductivity and the ambipolar diffusion length in highly crystalline microcrystalline silicon films for photovoltaic applications

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