Rapid Reversible Light-Induced Crystallization of Amorphous Semiconductors

Feinleib, J.; deNeufville, J. P.; Moss, S. C.; Ovshinsky, Stanford R.

doi:10.1063/1.1653653

Cited by 454 publications

(109 citation statements)

References 9 publications

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“…A common example of such processes is the rewritable compact disc, in which a diode laser induces a phase transition between crystalline and amorphous material. 17 In industrial applications, one may consider laser cladding, where a surface layer different from the bulk material is produced through melting and resolidification, 18 or solid free-form fabrication (SFF) approaches such as selective laser sintering (SLS), 19 as important modifying processes that would fall under the umbrella of LDWM.…”

Section: Laser Direct-write Modification (Ldwm)mentioning

confidence: 99%

Laser Direct-Write Processing

Arnold¹,

Piqué²

2007

MRS Bull.

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Direct-write techniques enable computer-controlled two-and three-dimensional pattern formation in a serial fashion. Among these techniques, the versatility offered by laser-based direct-write methods is unique, given their ability to add, remove, and modify different types of materials without physical contact between a tool or nozzle and the material of interest. Laser pulses used to generate the patterns can be manipulated to control the composition, structure, and even properties of individual three-dimensional volumes of materials across length scales spanning six orders of magnitude, from nanometers to millimeters. Such resolution, combined with the ability to process complex or delicate material systems, enables laser direct-write tools to fabricate structures that are not possible to generate using other serial or parallel fabrication techniques. The goal of the articles in this issue of MRS Bulletin is to illustrate the range of materials processing capabilities, fundamental research opportunities, and commercially viable applications that can be achieved using recently developed laser direct-write techniques. We hope that the articles provide the reader with a fresh perspective on the challenges and opportunities that these powerful techniques offer for the fabrication of novel devices and structures.

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Section: Laser Direct-write Modification (Ldwm)mentioning

confidence: 99%

Laser Direct-Write Processing

Arnold¹,

Piqué²

2007

MRS Bull.

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“…1 Chalcogenides have also been proposed as suitable materials for the next generation of electrically addressed phase change memory (PCM) devices. 2 The basic mechanism of PCM relies on reversible switching between amorphous and crystalline phases, characterized by significantly different optical 3 and electrical 4 properties. Phase transformations can be triggered by means of short optical laser or electrical current pulses and are characterized by large differences in optical reflectivity or electrical resistivity, respectively.…”

Section: Introductionmentioning

confidence: 99%

Dynamics of laser-induced phase switching in GeTe films

Gawełda

Siegel

Afonso

et al. 2011

Journal of Applied Physics

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High Seebeck effects from conducting polymer: Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) based thin-film device with hybrid metal/polymer/metal architecture APL: Org. Electron. Photonics 5, 238 (2012) High Seebeck effects from conducting polymer: Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) based thin-film device with hybrid metal/polymer/metal architecture Appl. Phys. Lett. 101, 173304 (2012) Response to "Comment on 'Silver/silicon dioxide/silver sandwich films in the blue-to-red spectral regime with negative-real refractive index'" [Appl. Phys. Lett. 101, 156101 (2012)] Appl. Phys. Lett. 101, 156102 (2012) On the determination of the glass forming ability of AlxZr1−x alloys using molecular dynamics, Monte Carlo simulations, and classical thermodynamics J. Appl. Phys. 112, 073508 (2012) Enhanced photoanode properties of epitaxial Ti doped α-Fe2O3 (0001) thin films Appl. Phys. Lett. 101, 133908 (2012) Additional information on J. Appl. Phys. Phase switching in GeTe thin films (grown using a modified metal organic chemical vapor deposition system) upon pulsed femtosecond and nanosecond laser irradiation has been studied. Two in situ methods, i.e., optical microscopy and real-time reflectivity measurements, have been used in order to compare the optical response before and after phase change and to follow the phase change dynamics with a time resolution close to 400 ps. The results show that cycling is possible under irradiation with both fs and ns pulses using single pulses for amorphization and multiple pulses for crystallization. The use of ns pulses favors the crystalline-to-amorphous phase transformation, with a characteristic transformation time of $15 ns. The presence of the liquid phase was identified and temporally resolved, featuring a well-defined transient reflectivity state, in between those of the crystalline and amorphous phases. We have also studied the role of material configuration in the phase change dynamics and the mechanisms involved in the re-crystallization process.

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“…These materials are used as the memory device in rewritable phase change optical disks. [1][2][3] The key attributes for promising rewritable storage media include high-speed writing and erasing, adequate number of overwrite cycles, stable marks, sufficiently high signal-to-noise ratio, and good recording sensitivity. 4 Currently applied phase change media are mainly based on two families of phase change materials, namely ternary Ge:Sb:Te alloys or quaternary Ag:In:Sb:Te alloys.…”

Section: Introductionmentioning

confidence: 99%

Crystallization kinetics of sputter-deposited amorphous AgInSbTe films

Njoroge

Wuttig

2001

Journal of Applied Physics

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AgInSbTe films have recently attracted considerable interest as advanced materials for phase change recording. For this application the determination of crystallization kinetics is of crucial importance. In this work the temperature dependence of structural and electrical properties of sputtered AgInSbTe films has been determined. Temperature dependent measurements of the electrical resistance have been employed to study the kinetics of structural changes of these films. Upon annealing a major resistivity drop is observed at around 160 °C which can be attributed to a structural change as corroborated by x-ray diffraction. X-ray diffraction shows an amorphous phase for as-deposited films, while crystalline films with hexagonal structure (a=4283 Å, c=16 995 Å) are obtained upon annealing above 160 °C. By applying Kissinger’s method, an activation energy of 3.03±0.17 eV is obtained for the crystallization. X-ray reflection measurements reveal a density increase of 5.2%±0.2% and a thickness decrease of 5.5%±0.2% upon crystallization.

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Rapid Reversible Light-Induced Crystallization of Amorphous Semiconductors

Cited by 454 publications

References 9 publications

Laser Direct-Write Processing

Laser Direct-Write Processing

Dynamics of laser-induced phase switching in GeTe films

Crystallization kinetics of sputter-deposited amorphous AgInSbTe films

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