Rapid synthesis of Si3N4 dendritic crystals

Bai, Yu‐Jun; Wang, Chengguo; Qi, Yong‐Xin; Zhu, Bo; Wang, Yanxiang; Liu, Yu-Xian; Geng, Guoqing

doi:10.1016/j.scriptamat.2005.10.013

Cited by 12 publications

(7 citation statements)

References 30 publications

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“…Mixed phases consisting of α‐Si 3 N 4 and β‐Si 3 N 4 were prepared from SiCl 4 and NaN 3 at 670°C 16 by increasing the amount of SiCl 4 . Similar results were also obtained on increasing the amount of NaN 3 at 480° 17 or 100°C 18 . In another similar paper that included addition of a small amount of CCl 4 , 19 β‐Si 3 N 4 nanorods have been prepared at 200°C.…”

Section: Introductionsupporting

confidence: 72%

Solvothermal Synthesis of Si₃N₄ Nanomaterials at a Low Temperature

Xing

et al. 2008

Journal of the American Ceramic Society

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Silicon nitride nanowires or nanorods have been synthesized from SiCl 4 , NaN 3 , and metallic Mg at temperatures ranging from 2001 to 3001C. X-ray powder diffraction patterns indicated that the as-obtained products were mainly b-Si 3 N 4 . Scanning electron microscope and high-resolution transmission electronic microscopy showed that the samples mostly consisted of Si 3 N 4 nanowires or nanorods. As metallic iron powder was used, a-Si 3 N 4 was mainly formed at 2501C.

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Section: Introductionsupporting

confidence: 72%

Solvothermal Synthesis of Si₃N₄ Nanomaterials at a Low Temperature

Xing

et al. 2008

Journal of the American Ceramic Society

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“…The authors proposed that either NaGa(N 3 ) 4 or [Cl x Ga(N 3 ) 3-x ] n could be intermediates in these reactions. Hexagonal and cubic InN with 20 to 30 nm particles have been synthesised by reactions of InCl 3 with Li 3 N in xylene or InI 3 and NaNH 2 in benzene around 250°C [68,69]. The products were single crystal sheets and low aspect ratio nanorods.…”

Section: Growth Of Anisotropic Particlesmentioning

confidence: 99%

Solution Phase Preparative Routes to Nitride Morphologies of Interest in Catalysis

Mazumder

Hector

2009

Top Catal

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This review assesses the track record and prospects of non-oxide sol-gel and solvothermal routes to nitride materials for use in catalysis. There is a strongly developing body of synthesis methods that yield highly porous materials, some with engineered pore structures, nanocrystalline materials with high surface areas and anisotropic nanocrystals that have their surface area tuned to a particular crystal face. Most of the existing catalytic work on such solution-derived nitrides has focussed on utilising base properties due to surface bound amide and imide groups in silicon (imido)nitride compositions, but there are opportunities to extend these methods to other interesting nitride compositions.

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“…Recently, syntheses were carried out at even lower temperatures, ranging from 100°C to 250°C. A mixture of α‐ and β‐Si 3 N 4 was prepared from SiCl 4 and NaN 3 at 100°C 16 . In another similar process that included the addition of a small dose of CCl 4 , β‐Si 3 N 4 has been prepared at 200°C 17 .…”

Section: Introductionmentioning

confidence: 99%

“…A mixture of aand b-Si 3 N 4 was prepared from SiCl 4 and NaN 3 at 1001C. 16 In another similar process that included the addition of a small dose of CCl 4 , b-Si 3 N 4 has been prepared at 2001C. 17 A mixture of aand b-Si 3 N 4 was also prepared using NaN 3 and SiCl 4 as reactants and S as an accessory ingredient at 2501C.…”

Section: Introductionmentioning

confidence: 99%

Orthogonal Design‐Assisted Solvothermal Strategy for Preparing Silicon Nitride Nanodendrites on a Large Scale

Wang¹,

Zhao²,

Zhu³

et al. 2010

Int J Applied Ceramic Tech

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We demonstrate herein the orthogonal strategy for preparing Si3N4 dendrites at low temperatures using NaN3, SiCl4, and Mg powder as the starting materials. The reaction conditions, such as dose of SiCl4 and Mg, reaction temperature, and reaction time, were investigated in detail. Magnified experiments were carried out in an autoclave with a capacity of 1 L and Si3N4 dendrites were obtained with a conversion ratio of 53.08% calculated from the amount of the limited reactant NaN3 (because NaN3 is relatively expensive). Estimated from the magnified experiments, the cost of Si3N4 is much less than the market price, which indicates that this is a promising process for industrial application.

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Rapid synthesis of Si3N4 dendritic crystals

Cited by 12 publications

References 30 publications

Solvothermal Synthesis of Si₃N₄ Nanomaterials at a Low Temperature

Solvothermal Synthesis of Si₃N₄ Nanomaterials at a Low Temperature

Solution Phase Preparative Routes to Nitride Morphologies of Interest in Catalysis

Orthogonal Design‐Assisted Solvothermal Strategy for Preparing Silicon Nitride Nanodendrites on a Large Scale

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Rapid synthesis of Si3N4 dendritic crystals

Cited by 12 publications

References 30 publications

Solvothermal Synthesis of Si3N4 Nanomaterials at a Low Temperature

Solvothermal Synthesis of Si3N4 Nanomaterials at a Low Temperature

Solution Phase Preparative Routes to Nitride Morphologies of Interest in Catalysis

Orthogonal Design‐Assisted Solvothermal Strategy for Preparing Silicon Nitride Nanodendrites on a Large Scale

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Product

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Solvothermal Synthesis of Si₃N₄ Nanomaterials at a Low Temperature

Solvothermal Synthesis of Si₃N₄ Nanomaterials at a Low Temperature