Rapid thermal annealing effects on blue luminescence of As-implanted GaN

Abstract

Rapid thermal annealing effects on blue luminescence of As-implanted GaN grown by metalorganic vapor phases epitaxy were investigated by means of photoluminescence and photoluminescence excitation measurements. The locations of the As-implantation induced bands and the associated transition channels for the emission were determined to characterize the As-implanted GaN. After the rapid thermal annealing treatment, the deep As-related levels become more ready to be populated by photoexcitation at low temperature so that the new blue luminescence emission peak is enhanced significantly, whose activation energy is found to be 46 meV.

Ligand-induced Degradation of the Ethylene Receptor ETR2 through a Proteasome-dependent Pathway in Arabidopsis

“…Silver replaces a copper cofactor required by the receptors for binding ethylene, resulting in ethylene insensitivity (11). The etr2-1 and the etr1-1 mutants are both missense mutations within the predicted ethylene-binding regions of the receptors that result in dominant ethylene insensitivity (17,33). Treatment of ctr1 plants with silver or introduction of either the etr2-1 or the etr1-1 mutations into the ctr1 background abolished ethyleneinduced turnover of ETR2 protein (Fig.…”

Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

“…In the case of GaN, the doping with As has been studied with respect to its luminescence behaviour [15][16][17][18][19][20][21][22] and, at higher concentrations, with regards to the formation of GaAs x N 1−x alloys and the related modification of the GaN band gap [17,21,[23][24][25][26].…”

Amphoteric arsenic in GaN

“…However, while, on the As-rich side of the phase diagram, it is possible to incorporate up to ~10-15% of N into cubic GaAs [3,4], on the N-rich side not more than ~1% of As in GaN have been achieved [5][6][7][8]. In the intermediate region, usually the coexistence of hexagonal N-rich GaAsN and cubic As-rich GaNAs phases is observed.GaN which is lightly As-doped is also highly interesting due to the fact that it shows intense blue luminescence centered around 2.6 eV, as observed already many years ago in Asimplanted GaN by Pankove and Hutchby [9] and Metcalfe et al [10], and subsequently also found in GaN doped with As during growth [5,[11][12][13][14][15][16]. The chemical nature of the 2.6 eV blue luminescence and the fact that it results from optical centers involving one As atom only was unambiguously proven by means of the radiotracer photoluminescence (PL) work of Stötzler et al [17], who studied the luminescence along the radioactive decay chains 71 As→ 71 Ge→ 71 Ga and 72 Se→ 72 As→ 72 Ge.…”

“…GaN which is lightly As-doped is also highly interesting due to the fact that it shows intense blue luminescence centered around 2.6 eV, as observed already many years ago in Asimplanted GaN by Pankove and Hutchby [9] and Metcalfe et al [10], and subsequently also found in GaN doped with As during growth [5,[11][12][13][14][15][16]. The chemical nature of the 2.6 eV blue luminescence and the fact that it results from optical centers involving one As atom only was unambiguously proven by means of the radiotracer photoluminescence (PL) work of Stötzler et al [17], who studied the luminescence along the radioactive decay chains 71 As→ 71 Ge→ 71 Ga and 72 Se→ 72 As→ 72 Ge.…”

“…Subsequently, the 2.6 eV blue luminescence [12,[14][15][16]19] and a deep level ~0.8 eV below the conduction band have been attributed to As Ga [20,21]. While there are indications that the As Ga :As N ratio changes with the overall Ga:N:As stoichiometry [13,15], so far no direct evidence for so-called As Ga "anti-sites" exists, in particular it is unknown whether As Ga might be a minority or majority defect in lightly As-doped GaN.…”