Rapid thermal annealing effects on blue luminescence of As-implanted GaN grown by metalorganic vapor phases epitaxy were investigated by means of photoluminescence and photoluminescence excitation measurements. The locations of the As-implantation induced bands and the associated transition channels for the emission were determined to characterize the As-implanted GaN. After the rapid thermal annealing treatment, the deep As-related levels become more ready to be populated by photoexcitation at low temperature so that the new blue luminescence emission peak is enhanced significantly, whose activation energy is found to be 46 meV.

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