2009
DOI: 10.1016/j.jlumin.2008.09.003
|View full text |Cite
|
Sign up to set email alerts
|

Rapid thermal annealing effects on the structural and optical properties of ZnO films deposited on Si substrates

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

4
32
0

Year Published

2010
2010
2018
2018

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 97 publications
(36 citation statements)
references
References 26 publications
4
32
0
Order By: Relevance
“…C -1 ) and gold catalyst (α = 14 x 10 -6. C -1 ) [20]. We supposed that due to large different in the thermal expansion coefficient, as the annealing temperature increased, the residual stress also increased and shifting the diffraction angle to right.…”
Section: Methodsmentioning
confidence: 96%
“…C -1 ) and gold catalyst (α = 14 x 10 -6. C -1 ) [20]. We supposed that due to large different in the thermal expansion coefficient, as the annealing temperature increased, the residual stress also increased and shifting the diffraction angle to right.…”
Section: Methodsmentioning
confidence: 96%
“…Y. C. Lee et al deposited ZnO thin films on Si substrate following RTA with different annealing time. The PL spectrum revealed a significant improvement in the UV luminescence of ZnO films following RTA for 1 min [12]. X. Q. Wei et al reported structure and defects analysis of ZnO thin films deposited by PLD method and annealed in different ambients [13].…”
Section: Introductionmentioning
confidence: 98%
“…1(a), the in-plane stress () can be calculated using the biaxial strain model [39]. In a hexagonal system such as ZnO, is deduced from the c-axis stress as follows [41]:…”
Section: Resultsmentioning
confidence: 99%