2011
DOI: 10.1007/s10832-011-9632-0
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Effects of rapid thermal annealing in different ambients on structural, electrical, and optical properties of ZnO thin films by sol-gel method

Abstract: We studied the effects of rapid thermal annealing in different ambients on the structural, electrical and optical properties of the sol-gel derived ZnO thin films. All the films after annealing showed highly degree of (002) oriented in the X-ray diffractometry (XRD) patterns. The effects of annealing ambients on electrical properties of the films were studied. Carrier concentration, resistivity and mobility were found to be distinguished after annealed in different ambients. The sample with the lowest resistiv… Show more

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Cited by 21 publications
(10 citation statements)
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“…XPS core-level spectra are shown in Figure . The O 1s region scans in Figure a–c have two primary components due to O 2– ions in the wurtzite ZnO lattice and O 2– ions in oxygen-deficient ZnO, labeled O1s-A and O1s-B, respectively. ,, A third peak labeled O1s-C is related to surface oxygen due to chemisorbed or dissociated oxygen or OH – groups like CO 3 . The relative O1s-B increase with temperature in Figure a–c confirms that the as-grown wires have an oxygen-deficient surface layer with an O1s-B/O1s-A ratio of 0.3, in agreement with the CLS in Figure showing an increased intensity of the 2.45 eV V O -related integrated area emission for R B = 20 nm vs R B = 450 nm.…”
Section: Results and Discussionmentioning
confidence: 99%
“…XPS core-level spectra are shown in Figure . The O 1s region scans in Figure a–c have two primary components due to O 2– ions in the wurtzite ZnO lattice and O 2– ions in oxygen-deficient ZnO, labeled O1s-A and O1s-B, respectively. ,, A third peak labeled O1s-C is related to surface oxygen due to chemisorbed or dissociated oxygen or OH – groups like CO 3 . The relative O1s-B increase with temperature in Figure a–c confirms that the as-grown wires have an oxygen-deficient surface layer with an O1s-B/O1s-A ratio of 0.3, in agreement with the CLS in Figure showing an increased intensity of the 2.45 eV V O -related integrated area emission for R B = 20 nm vs R B = 450 nm.…”
Section: Results and Discussionmentioning
confidence: 99%
“…There are several methods of preparing AZO films, including magnetron sputtering, pulsed laser deposition (PLD), sol-gel, and chemical vapour deposition. However, only magnetron sputtering has been used to prepare largescale films with high quality because of its high deposition rate and low deposition temperature [11][12][13][14]. Because sputtering is the main method of preparing AZO films, fabricating the sputtering target has become the most important step of the method [15].…”
Section: Introductionmentioning
confidence: 99%
“…Currently, ZnO becomes one of the excellent TCO materials due to its optoelectronic and photovoltaic conversion properties, with its large band gap (∼3.3 eV) , abundance in nature and absence of toxicity . ZnO‐based TCOs can be grown with various deposition techniques, some of them are: vacuum coating , pulsed laser deposition , reactive evaporation , spray pyrolysis , sol–gel process , spin coating and magnetron sputtering . From these methods, r.f.…”
Section: Introductionmentioning
confidence: 99%