We directly measure the three-dimensional movement of intrinsic point defects driven by applied electric fields inside ZnO nano- and micro-wire metal–semiconductor–metal device structures. Using depth- and spatially resolved cathodoluminescence spectroscopy (CLS) in situ to map the spatial distributions of local defect densities with increasing applied bias, we drive the reversible conversion of metal–ZnO contacts from rectifying to Ohmic and back. These results demonstrate how defect movements systematically determine Ohmic and Schottky barriers to ZnO nano- and microwires and how they can account for the widely reported instability in nanowire transport. Exceeding a characteristic threshold voltage, in situ CLS reveals a current-induced thermal runaway that drives the radial diffusion of defects toward the nanowire free surface, causing VO defects to accumulate at the metal–semiconductor interfaces. In situ post- vs pre-breakdown CLS reveal micrometer-scale wire asperities, which X-ray photoelectron spectroscopy (XPS) finds to have highly oxygen-deficient surface layers that can be attributed to the migration of preexisting VO species. These findings show the importance of in-operando intrinsic point-defect migration during nanoscale electric field measurements in general. This work also demonstrates a novel method for ZnO nanowire refinement and processing.

A combination of depth-resolved cathodoluminescence spectroscopy (DRCLS) and X-ray photoemission depth profiling (XPS) measured the pronounced changes in both the electronic density of states and lithium composition near the nanoscale Li x V 2 O 5 /LiPON interface. DRCLS studies of electrochemically lithiated bare V 2 O 5 and the sputterdeposited V 2 O 5 plus LiPON overlayer electrochemically lithiated in stages both showed that in the bulk the luminescence intensity of the "split-off" hybridized bonding density of states was anticorrelated with XPSmeasured Li content, decreasing as the Li content increased. However, the LiPON overlayer was found to modify the band structure of the underlying Li x V 2 O 5 (LVO) to a depth of at least 30 nm beneath the V 2 O 5 interface. DRCLS spectra near the electrochemically lithiated LiPON/ LVO interface showed a significant intensity of the split-off band, implying a low Li content. However, XPS depth profiling revealed a pronounced negative gradient of Li extending from a maximum Li content at the intimate LiPON boundary to its lowest content of ∼30 nm into the V 2 O 5 in the same region, indicating a strong interaction between band structure and Li electrochemical potential near this heterojunction. These results provide evidence for substantial effects on the local band structure near an electrolyte/cathode interface and insights into the electrochemical interface behavior of solid-state batteries in general.