Rapid thermal curing of BCB dielectric

Garrou, Philip E.; Heistand, R.; Dibbs, Mitchell G.; Manial, T; Mohler, Carol; Stokich, T. M.; Townsend, P. H.; Adema, G.M.; Berry, M.; Turlik, I.

doi:10.1109/33.214859

Cited by 54 publications

(35 citation statements)

References 12 publications

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“…The estimated model is in good agreement with the already proposed kinetic model for BCB [2] [6]. There is a poor estimation for the diffusion controlled part, which is also described in previous publications [6] [28]. With the focus on lower cure temperatures, the influence of the diffusion controlled part increases.…”

Section: Reaction Model F( ) Power Lawsupporting

confidence: 74%

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Polymerization of Thin Film Polymers

Woehrmann¹,

Toepper²

2012

New Polymers for Special Applications

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Section: Reaction Model F( ) Power Lawsupporting

confidence: 74%

“…al.. Different literature sources describe an activation energy in a range from 146 kJ/mol up to 197,6 kJ/mol [27] [17] [28]. A disadvantage of this method is that the values are only estimated at one degree of cure (around 73 % conversion).…”

Section: Reaction Model F( ) Power Lawmentioning

confidence: 99%

Polymerization of Thin Film Polymers

Woehrmann¹,

Toepper²

2012

New Polymers for Special Applications

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“…This very reactive intermediate readily undergoes a so-called Diels-Alder reaction with an available vinylsiloxane group to form a three-dimensional network structure as is shown in Fig. 7 [37]. As is clear from this reaction mechanism, no byproducts are created during the polymerization.…”

Section: Dvs-bcb Adhesivementioning

confidence: 85%

“…The electrical, optical, mechanical and thermal properties of DVS-BCB [37,39] are listed in Table 1. Most important for our application are the low optical loss at telecommunication wavelengths, the low shrinkage upon cure (as this can be the origin of void formation at the bonding interface), its high glass transition temperature (allowing a large post-bonding thermal budget) and its excellent planarization properties.…”

Section: Dvs-bcb Adhesivementioning

confidence: 99%

III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects

Roelkens

Liu

Liang

et al. 2010

Laser & Photonics Reviews

486

320

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In this paper we elaborate on our work in the field of mid-infrared photonic integrated circuits for spectroscopic sensing applications. We discuss the use of silicon-based photonic integrated circuits for this purpose and detail how a variety of optical functions in the mid-infrared besides passive waveguiding and filtering can be realized, either relying on nonlinear optics or on the integration of other materials such as GaSb-based compound semiconductors, GeSn epitaxy and PbS colloidal nanoparticles.

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“…4. 13 Subsequently InP dies were bonded ͑using a process that is described later͒ and the wafer stack was cured at 250°C for 1 h. The bonding quality was assessed by optical inspection through the Pyrex substrate. When the degree of polymerization of the DVS-bis-BCB is too high, it is not tacky any more and the bonding fails.…”

Section: Dvs-bis-bcb Adhesive Die To Wafer Bonding Processmentioning

confidence: 99%

Adhesive Bonding of InP∕InGaAsP Dies to Processed Silicon-On-Insulator Wafers using DVS-bis-Benzocyclobutene

Roelkens

Brouckaert

Thourhout

et al. 2006

J. Electrochem. Soc.

127

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The process of bonding InP/InGaAsP dies to a processed silicon-on-insulator wafer using sub-300 nm layers of DVS-bisbenzocyclobutene ͑BCB͒ was developed. The planarization properties of these DVS-bis-BCB layers were measured and an optimal prebonding die preparation and polymer precure are presented. Bonding quality and bonding strength are assessed, showing high-quality bonding with sufficient bonding strength to survive postbonding processing. Silicon-on-insulator ͑SOI͒ is a material system that is gaining importance in semiconductor electronics industry for low power and high performance operation. Also in integrated optics it is an emerging technology platform. This is due to the fact that the refractive index contrast between the silicon waveguide core and the SiO 2 cladding is high ͑⌬n Х 2͒. This allows making very compact integrated optical functions leading to large-scale integration of optical functions. Moreover, these optical components can be fabricated using standard complementary metal oxide semiconductor ͑CMOS͒ technology, improving the yield, reliability, and economy of scale. 1Although silicon is an interesting material for passive optical functions ͑optical filters, waveguiding, etc.͒ above 1.1 m, where the material is transparent, it has an indirect bandgap and therefore is an inefficient light emitter. In order to integrate both active optical functions ͑laser emission, amplification, detection͒ and passive optical functions, III-V semiconductors with a direct bandgap need to be integrated on top of the passive SOI waveguide circuits. We focus in this paper on the integration of InP/InGaAsP heterostructures emitting at 1.55 m on top of silicon-on-insulator waveguide circuits by means of a die to wafer bonding process, as shown in Fig. 1. Unprocessed InP/InGaAsP dies are bonded with its epitaxial layers down onto a processed SOI waveguide wafer, after which the InP substrate is removed. After substrate removal, the optoelectronic components can be fabricated in the bonded epitaxial layer.Integration of two different material systems by means of a wafer bonding process can be done either using direct molecular bonding or adhesive bonding. Direct molecular bonding 2 relies on the van der Waals interaction between both surfaces. As this is a short-range force, sub-nm rms roughness of the surfaces is required.3 Although this is obtainable on unprocessed SOI wafers using chemicalmechanical polishing ͑CMP͒-and is the preferred way to fabricate SOI layer stacks-it is more difficult to obtain on the processed SOI waveguide circuits and on epitaxially grown InP/InGaAsP substrates. Therefore, in this work adhesive bonding was chosen to bond the III-V epi-structures on top of SOI waveguide circuits. One of the main advantages of adhesive bonding is that the surface quality that is required for bonding is less stringent as the polymer wets the surface and fills the troughs of the surface. It is also tolerant to particle contamination to some extent, and the topography of the surfaces to be bonded can be ...

show abstract

Rapid thermal curing of BCB dielectric

Cited by 54 publications

References 12 publications

Polymerization of Thin Film Polymers

Polymerization of Thin Film Polymers

III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects

Adhesive Bonding of InP∕InGaAsP Dies to Processed Silicon-On-Insulator Wafers using DVS-bis-Benzocyclobutene

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