RAS: An efficient probe to characterize Si(001)-(2×1) surfaces

Witkowski, Nadine; Coustel, Romain; Pluchery, Olivier; Borensztein, Y.

doi:10.1016/j.susc.2006.08.045

Cited by 45 publications

(60 citation statements)

References 38 publications

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“…Indeed, the RAS can be used as an efficient tool to characterize the surface quality of the vicinal Si surface. 37 First, one can notice that the shape of the SDR spectrum for benzene saturation is similar to that obtained on the monohydride phase. As we have shown previously, this indicates that the benzene molecules are bound to the dangling bonds of the dimer Si atoms, leaving unbroken.…”

Section: A Optical Propertiessupporting

confidence: 62%

Optical investigation of benzene adsorption on vicinal single-domainSi(001)−(2×1)surfaces

2005

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We report on an experimental investigation of benzene adsorption on single-domain Si͑001͒-͑2 ϫ 1͒ by means of surface sensitive optical spectroscopies which are reflectance anisotropy spectroscopy and surface differential reflectivity spectroscopy combined with scanning tunneling microscopy. These optical techniques are sensitive to the number of occupied dimers and permit us to demonstrate that benzene molecules are bound to slightly less than one dimer out of two. We investigate the modification of optical spectra on the benzenesaturated surface versus time and conclude that no thermally induced geometry conversion of benzene molecules is observed.

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Section: A Optical Propertiessupporting

confidence: 62%

Optical investigation of benzene adsorption on vicinal single-domainSi(001)−(2×1)surfaces

2005

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“…Despite the observation of a disordered surface indicated by the LEED pattern, we do obtain a different and characteristic RA signal when annealing under TBP, indicating at least some degree of ordered anisotropic structures on the Ge surface. In general, differences in the atomic order of probed (100) surfaces -such as cleanliness, surface reconstruction and chemical configuration-affect shape and amplitude of RA spectra [26]. Considering that (1) P induces changes on the surface reconstruction [10]; (2) the thickness estimation for the P coverage from XPS measurements is more than 1 MLof P; and (3) carbon [20] and TBP fragments [25] mainly reduce the observed signal intensity, we believe that the RA spectrum of Fig.…”

Section: Resultsmentioning

confidence: 99%

In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient

Barrigón¹,

Brückner²,

Supplie³

et al. 2013

Journal of Crystal Growth

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GalnP nucleation on Ge(100) often starts by annealing of the Ge(100) substrates under supply of phosphorus precursors. However, the influence on the Ge surface is not well understood. Here, we studied vicinal Ge(100) surfaces annealed under tertiarybutylphosphine (TBP) supply in MOVPE by in situ reflection anisotropy spectroscopy (RAS), X-ray photoelectron spectroscopy (XPS), and low energy electron diffraction (LEED). While XPS reveals a P termination and the presence of carbon on the Ge surface, LEED patterns indicate a disordered surface probably due to by-products of the TBP pyrolysis. However, the TBP annealed Ge(100) surface exhibits a characteristic RA spectrum, which is related to the P termination. RAS allows us to in situ control phosphorus desorption dependent on temperature.

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“…17,18 In order to reduce the interaction between the substrate and the organic layer, required for a comprehensive molecular electronic structure investigation, the silicon surface was passivated by a hydrogenation process, i.e., passivating the silicon surface atoms (dangling bonds) by hydrogen atoms. 19 The hydrogenation was performed using an Omicron Atomic Hydrogen Source at the I511 end-station and D1011 beam line, and a hot filament located few centimeters from the surface of the sample at TEMPO beamline.…”

Section: A Sample Preparationmentioning

confidence: 99%

Experimental and theoretical study of electronic structure of lutetium bi-phthalocyanine

Bidermane

Lüder

Boudet

et al. 2013

The Journal of Chemical Physics

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Using Near Edge X-Ray Absorption Fine Structure (NEXAFS) Spectroscopy, the thickness dependent formation of Lutetium Phthalocyanine (LuPc 2 ) films on a stepped passivated Si(100)2×1 reconstructed surface was studied. Density functional theory (DFT) calculations were employed to gain detailed insights into the electronic structure. Photoelectron spectroscopy measurements have not revealed any noticeable interaction of LuPc 2 with the H-passivated Si surface. The presented study can be considered to give a comprehensive description of the LuPc 2 molecular electronic structure. The DFT calculations reveal the interaction of the two molecular rings with each other and with the metallic center forming new kinds of orbitals in between the phthalocyanine rings, which allows to better understand the experimentally obtained NEXAFS results. © 2013 AIP Publishing LLC.

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RAS: An efficient probe to characterize Si(001)-(2×1) surfaces

Cited by 45 publications

References 38 publications

Optical investigation of benzene adsorption on vicinal single-domainSi(001)−(2×1)surfaces

Optical investigation of benzene adsorption on vicinal single-domainSi(001)−(2×1)surfaces

In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient

Experimental and theoretical study of electronic structure of lutetium bi-phthalocyanine

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