Rashba effect of bismuth thin film on silicon studied by spin-resolved ARPES

Takayama, A.; Sato, Takafumi; Souma, S.; Takahashi, Takashi

doi:10.1016/j.elspec.2014.11.002

Cited by 7 publications

(3 citation statements)

References 24 publications

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“…In such a way the thickness of stable hexagonal Bi films could be reduced down to 4 BLs [47]. The Si(1 1 1)(7 × 7) substrate is dominant in the majority of recent reports [43,45,[48][49][50][51][52][53][54][55][56][57][58][59][60].…”

Section: Growth Of Thin Filmsmentioning

confidence: 99%

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Topological electronic structure and Rashba effect in Bi thin layers: theoretical predictions and experiments

Hricovíni¹,

Richter²,

Heckmann³

et al. 2019

J. Phys.: Condens. Matter

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The goal of the present review is to cross-compare theoretical predictions with selected experimental results of spin-and angle-resolved photoelectron spectroscopy on bismuth thin films exhibiting topological properties and a strong Rashba effect. Despite the bulk Bi crystal is topologically trivial, a single free-standing Bi(1 1 1) bilayer has been predicted by calculations to be a topological insulator. This triggered a large series of studies of ultrathin Bi(1 1 1) films grown on various substrates. Using selected examples we review theoretical predictions of atomic and electronic structure of Bi thin films exhibiting topological properties due to interaction with a substrate. We survey as well experimental signatures of topological surface states, as obtained namely by angle-resolved photoelectron spectroscopy.

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Section: Growth Of Thin Filmsmentioning

confidence: 99%

“…When the Bi film is thick enough, these states are independent from each other. Upon reducing film thickness, the wave functions of the two Rashba states start to overlap and hybridize, eventually leading to a substantially reduced in-plane component of the SP [54,57].…”

Section: Surface States-rashba Effectmentioning

confidence: 99%

Topological electronic structure and Rashba effect in Bi thin layers: theoretical predictions and experiments

Hricovíni¹,

Richter²,

Heckmann³

et al. 2019

J. Phys.: Condens. Matter

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“…Because of the small effective mass in certain orientations and the low intrinsic carrier density, using quantum-size effect to realize the semi-metal/semiconductor transition in Bi thin-film have drawn attentions for decades [1][2]. In addition, recent researches on the surface of (0003) Bi observed metallic surface states formed by spin-orbital interaction [3][4], revealing that the potential applications of Bi and Bi-based materials to the magnetic devices. However, both the researches and applications of the versatile Bi properties depend mainly on the well-ordered structures, and the growth of nanoscale Bi thin films with high quality is of great importance.…”

Section: Introductionmentioning

confidence: 99%

Van Der Waals Epitaxial Growth of Bismuth Thin-film on Silicon (111) Substrate by MBE

Chou

Lin

2021

Preprint

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Crystallinity of an 80-nm-thick bismuth thin film grown on Si(111) substrate by MBE was investigated. The highly (0003) textured Bi film contains two twinning domains with different bilayer stacking sequences. The basic lattice parameters c and a as well as b, the bilayer thickness, of the two domains were determined from a series of X-ray diffraction (XRD) measurements, and found that the differences are within 0.1% as compared with those of bulk Bi reported in literature, suggesting that the Bi film has been nearly fully relaxed. From the XRD φ-scans of asymmetric Bi (01-14), (10-15), (11-26) planes and Si (220) plane as well as selected area electron diffraction patterns and electron back scatter diffraction pole figures, we confirmed the well registration between the lattices of Si and Bi lattice, i.e. the ω angle difference between Bi[0003] and Si[111] and the φ angle different between Bi[01-14] and Si[220] are 0.056° and 0.25°, respectively, and thus concluded that the growth is a quasi-van der Waals epitaxy.

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