Rate of localized gas discharge etching of silicon

Abstract

The dependence of the etching rate of silicon on the technological, design, and electrophysical parameters that characterize the glowing conditions and the properties of a localized gas discharge is studied. Experiments are performed at a gas pressure of 10 4 -10 5 Pa and a discharge gap of 50-500 µm. Emission spec troscopy is shown to be an efficient method for controlling the beginning and the end of localized gas dis charge etching of different materials.