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It is reported about an activation of processes of plasmochemical etching of silicon, films of silicon dioxide and slices of crystalline piezoelectric quartz by some metals (Ag, Au, Cu, Sn, Pb, Na, K, Ca). The method of a catalytic plasmochemical etching of 5i02 and Si under films of silver has been developed. The anomalously high etching speeds of Si07 and crystalline piezoelectric quartz (up to 2.5 microns/sec) were obtained. It was found, that the process of a catalytic etching under films Ag has an induction period, which duration depends on treatment ratings and a silver film thickness. The kinetics of the process has been investigated and its physicochemical model is offered.