Spectral Investigations of a Nonstationary High-Frequency Discharge in Carbon Tetrafluoride and Sulfur Hexafluoride

Abramov, A. V.; Abramova, E. A.; Dikarev, Yu. I.; Surovtsev, I. S.

doi:10.1023/b:japs.0000049634.82967.88

Cited by 4 publications

(2 citation statements)

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“…Shindo et al [52] and Shibayama et al [53] demonstrated this etching by negative ions in SF 6 plasma, where F − ions were found to be a dominant species and its density was well correlated with the etching rate. Different authors recognized atomic fluorine as the main etchant for silicon [20,21,28,54], but ion flux can also be an essential parameter for the etching of silicon and silicon oxide [55][56][57]. The effect of SF 6 flow rate on silicon etching rate in pure SF 6 plasma is rarely studied in the literature.…”

Section: Silicon Etching 421 Silicon Etch Ratementioning

confidence: 99%

Diagnostic and processing in SF₆RF remote plasma for silicon etching

Saloum¹,

Akel²,

Alkhaled³

2009

J. Phys. D: Appl. Phys.

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Plasma diagnostics and Si etching were carried out in 13.56 MHz SF6 remote plasma generated in a hollow cathode discharge system. The plasma diagnostics were performed in the remote zone at a constant pressure of 40 Pa, at a constant applied RF power of 300 W and as a function of the SF6 flow rate (40–2000 sccm), where absolute concentrations of fluorine atoms were measured using actinometry optical emission spectroscopy; electron density, electron temperature and plasma potential were determined using single Langmuir probe, positive ion flux and negative ion fraction were determined using an electrostatic planar probe. The silicon etching process was studied at two distant values of flow rate, 80 and 1800 sccm and for three conditions of the substrate holder, namely the substrate is grounded, the substrate is negatively biased and the substrate is positively biased. The etched silicon was characterized for etch rate, optical reflectance and photoluminescence properties. It was found that the etch rate is relatively high (about 15 mg cm−2 min−1) and it is controlled mainly by the ratio of the ion flux over the reactive atomic fluorine flux, the highest etch rate was obtained at the higher flow rate (1800 sccm) and for positively biased substrate. The reflectance of the silicon surface was significantly reduced after etching and a reflectance as low as 0.2% was measured. A visible photoluminescence from the etched surface was recorded; it is centred at about 600 nm, and its intensity is inversely proportional to the measured reflectance.

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Section: Silicon Etching 421 Silicon Etch Ratementioning

confidence: 99%

Diagnostic and processing in SF₆RF remote plasma for silicon etching

Saloum¹,

Akel²,

Alkhaled³

2009

J. Phys. D: Appl. Phys.

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“…In [1,2], we were the first to show that the localized discharge that fully corresponds to the geometry of the electrode surface elements projecting toward the material to be processed can be formed at a certain combination of gas pressure P and discharge gap length L. This specific feature of the localized gas dis charge (LGD) allowed us to apply it for dimensional mask free etching of a material surface. This etching was called "negative," since depressions form under projecting electrode elements.…”

Section: Introductionmentioning

confidence: 99%

Rate of localized gas discharge etching of silicon

2014

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The dependence of the etching rate of silicon on the technological, design, and electrophysical parameters that characterize the glowing conditions and the properties of a localized gas discharge is studied. Experiments are performed at a gas pressure of 10 4 -10 5 Pa and a discharge gap of 50-500 µm. Emission spec troscopy is shown to be an efficient method for controlling the beginning and the end of localized gas dis charge etching of different materials.

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