Rb2CO3-decorated In2O3 nanoparticles for the room-temperature detection of sub-ppm level NO2

Hung, Nguyen Manh; Hiếu, Nguyễn Minh; Chinh, Nguyen Duc; Hien, Truong Thi; Quang, Nguyen Duc; Majumder, Sutripto; Choi, Gyu Seok; Kim, Chunjoong; Kim, Dojin

doi:10.1016/j.snb.2020.128001

Cited by 43 publications

(10 citation statements)

References 53 publications

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“…The base resistance of the sensor was reduced continuously owing to the electron donation by water molecules into the SnS film. This trend is similar to our previous observations [ 18 , 45 ]. It should be noted that the response of the SnS film exhibited a decrease onset at 30% RH.…”

Section: Resultssupporting

confidence: 94%

“…NO 2 -sensing performances in the dark and under UV illumination were investigated by recording the real-time resistance of the sensors using a gas-sensing measurement setup, which is similar to that used in our previous studies [ 16 , 17 , 18 ]. In this study, a radiation of 254 nm wavelength with a constant intensity of 12.7 mW was used to illuminate the surface of the sample during the gas-sensing measurement process.…”

Section: Methodsmentioning

confidence: 99%

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Defect-Induced Gas-Sensing Properties of a Flexible SnS Sensor under UV Illumination at Room Temperature

Hung

Nguyen

Arepalli

et al. 2020

Sensors

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Tin sulfide (SnS) is known for its effective gas-detecting ability at low temperatures. However, the development of a portable and flexible SnS sensor is hindered by its high resistance, low response, and long recovery time. Like other chalcogenides, the electronic and gas-sensing properties of SnS strongly depend on its surface defects. Therefore, understanding the effects of its surface defects on its electronic and gas-sensing properties is a key factor in developing low-temperature SnS gas sensors. Herein, using thin SnS films annealed at different temperatures, we demonstrate that SnS exhibits n-type semiconducting behavior upon the appearance of S vacancies. Furthermore, the presence of S vacancies imparts the n-type SnS sensor with better sensing performance under UV illumination at room temperature (25 °C) than that of a p-type SnS sensor. These results are thoroughly investigated using various experimental analysis techniques and theoretical calculations using density functional theory. In addition, n-type SnS deposited on a polyimide substrate can be used to fabricate high-stability flexible sensors, which can be further developed for real applications.

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Section: Resultssupporting

confidence: 94%

Section: Methodsmentioning

confidence: 99%

Defect-Induced Gas-Sensing Properties of a Flexible SnS Sensor under UV Illumination at Room Temperature

Hung

Nguyen

Arepalli

et al. 2020

Sensors

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“…[17][18][19] In recent years, a variety of routes have been employed to design high performance sensing materials to particular analytes, including controlling the grain size, 20 engineering the surface structure, 21 and generating nanocomposites with multiproperties. 22 The construction of a multicomponent heterojunction semiconductor represents an effective strategy to develop ultrasensitive and selective gas sensing platforms. 23 Meanwhile, doping rare earth elements has emerged as a facile and reliable method to promote gas sensing performance through the production of more free electrons or oxygen vacancies when the aliovalent-doped cation substitutes the original cation.…”

Section: Introductionmentioning

confidence: 99%

Room-temperature triethylamine sensing of a chemiresistive sensor based on Sm-doped SnS₂/ZnS hierarchical microspheres

Zeng

et al. 2022

New J. Chem.

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“…Among them, the typical n-type semiconductor In 2 O 3 with a wide band gap ( E g = 2.86 eV) has been used to construct gas sensors with high sensing performances for various target gases such as NO 2 . At present, various In 2 O 3 structures such as nanoparticles, nanowires, nanosheets, and so forth have been synthesized to explore the structure–property relations for NO 2 detection. However, the agglomeration of nanomaterials after long-term heating operation will inevitably lead to a reduced specific surface area and decrease of surface active sites, which will cause the deterioration of the sensors .…”

Section: Introductionmentioning

confidence: 99%

Chemical and Electronic Modulation via Atomic Layer Deposition of NiO on Porous In₂O₃ Films to Boost NO₂ Detection

Xie

Liu

Jing

et al. 2021

ACS Appl. Mater. Interfaces

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To achieve high sensitivity under low-temperature operation is currently a challenge for metal oxide semiconductor gas sensors. In this work, a unique NiO-functionalized macroporous In 2 O 3 thin film is designed by atomic layer deposition (ALD), which demonstrates great potential in electronic sensors for detecting NO 2 at low temperature. This strategy allows for efficient engineering of the oxygen vacancy concentration and the formation of p−n heterojunctions in the hybrid In 2 O 3 /NiO thin films, which has been found to greatly impact the surface chemical and electrical properties of the sensing films. The sensor based on the optimized In 2 O 3 /NiO films exhibits a very high response of 532.2 to 10 ppm NO 2 , which is 26 times higher than that of the In 2 O 3 , at a relatively low operating temperature of 145 °C. In addition, an ultralow detection limit of ca. 6.9 ppb has been obtained, which surpasses most reports based on metal oxide sensors. Mechanistic investigations disclose that the improved sensor properties are resultant from the paramount surface active sites and high carrier concentration enabled by the oxygen vacancies, while excessive NiO ALD leads to a decreased sensor response due to the formed p−n heterojunctions.

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Rb2CO3-decorated In2O3 nanoparticles for the room-temperature detection of sub-ppm level NO2

Cited by 43 publications

References 53 publications

Defect-Induced Gas-Sensing Properties of a Flexible SnS Sensor under UV Illumination at Room Temperature

Defect-Induced Gas-Sensing Properties of a Flexible SnS Sensor under UV Illumination at Room Temperature

Room-temperature triethylamine sensing of a chemiresistive sensor based on Sm-doped SnS₂/ZnS hierarchical microspheres

Chemical and Electronic Modulation via Atomic Layer Deposition of NiO on Porous In₂O₃ Films to Boost NO₂ Detection

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Rb2CO3-decorated In2O3 nanoparticles for the room-temperature detection of sub-ppm level NO2

Cited by 43 publications

References 53 publications

Defect-Induced Gas-Sensing Properties of a Flexible SnS Sensor under UV Illumination at Room Temperature

Defect-Induced Gas-Sensing Properties of a Flexible SnS Sensor under UV Illumination at Room Temperature

Room-temperature triethylamine sensing of a chemiresistive sensor based on Sm-doped SnS2/ZnS hierarchical microspheres

Chemical and Electronic Modulation via Atomic Layer Deposition of NiO on Porous In2O3 Films to Boost NO2 Detection

Contact Info

Product

Resources

About

Room-temperature triethylamine sensing of a chemiresistive sensor based on Sm-doped SnS₂/ZnS hierarchical microspheres

Chemical and Electronic Modulation via Atomic Layer Deposition of NiO on Porous In₂O₃ Films to Boost NO₂ Detection