RDS characterization of GaAsSb and GaSb grown by MOVPE

Pitts, O.J.; Watkins, Simon P.; Wang, C.X.

doi:10.1016/s0022-0248(02)01892-4

Cited by 17 publications

(22 citation statements)

References 11 publications

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“…In the energy range beyond E3 eV the anisotropy is positive with a strong maximum around 3.8 eV and a relative minimum around 4.4 eV. The spectrum is similar to previously reported RA spectra obtained by MBE and MOVPE growth as well [12,13]. Until now it was only possible to correlate the RA spectrum of MBE grown GaSb(1 0 0) with other surface sensitive measurements.…”

Section: Uhv Characterization Of Movpe-grownsupporting

confidence: 84%

“…A dependence of RAS peak intensities on the carrier concentration in the vicinity of these transitions is typical for the so-called LEO effect. This effect has been reported previously for GaAs [7,18], ZnSe [19], and very recently for GaSb [13]. Pitts et al [13] discussed the peaks due to the LEO effect for both n-type and undoped GaSb substrates and a p-type GaSb epilayer.…”

Section: Ra Spectra Of Si-and C-doped Gasbsupporting

confidence: 69%

“…1 shows an RA spectrum of sample (a) measured in UHV at 300 K. There are some small peaks of negative anisotropy in the energetic range of the E 1 and E 1 þ D 1 bulk transitions between 1.5 and 3.0 eV. A LEO effect can be associated with these peaks [12,13]. Their dependence on the carrier density will be discussed in Section 3.3.…”

Section: Uhv Characterization Of Movpe-grownmentioning

confidence: 99%

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In situ monitored MOVPE growth of undoped and p-doped GaSb(100)

Kollonitsch¹,

Möller²,

Schimper³

et al. 2004

Journal of Crystal Growth

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Section: Uhv Characterization Of Movpe-grownsupporting

confidence: 84%

Section: Ra Spectra Of Si-and C-doped Gasbsupporting

confidence: 69%

Section: Uhv Characterization Of Movpe-grownmentioning

confidence: 99%

See 1 more Smart Citation

In situ monitored MOVPE growth of undoped and p-doped GaSb(100)

Kollonitsch¹,

Möller²,

Schimper³

et al. 2004

Journal of Crystal Growth

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“…It is important to note that these experiments were carried out on different samples prepared under different conditions and growth methods, namely MBE and MOCVD. Furthermore, after preparation of the deposited layer, different techniques were employed to avoid surface contamination [13][14][15]. Despite some uncertainty in the baseline position, it is nonetheless clear that the spectra are very similar.…”

Section: Optical Spectramentioning

confidence: 99%

“…By substituting Ga atoms into the second layer we succeed in lowering the surface charge, rendering the surface semiconducting and lowering its energy. Evidence for their existence is given by means of theoretical interpretation of previously reported reflectance anisotropy spectroscopy (RAS) measurements [13][14][15] carried out on the GaSb(001)-c(2 Â 6) surface. In the final part of the paper, we illustrate how the excess electronic charge associated with the presence of long Sb dimer chains is itself responsible for driving the formation of the defects.…”

mentioning

confidence: 99%

Optical properties of GaSb(001)‐c(2 × 6): The role of surface antisite defects

Hogan

Magri

Sole

2010

Physica Status Solidi (b)

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We consider the formation of surface antisite defects on a previously proposed model for the GaSb(001)-c(2 Â 6) surface. Based on ab initio total energy calculations, we show how these defects stabilize the otherwise metallic surface and how their formation is driven by the excess charge associated with the Sbrich surface conditions. The surface-sensitive optical technique of reflectance anisotropy spectroscopy is shown to be crucial for detecting the defects, and computation of spectra yields a good agreement with experiment when defects are included in the surface reconstruction.

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In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Supplie

May

Brückner

et al. 2017

Adv Materials Inter

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which he pioneered and established. In general, interfaces do not only determine electronic properties of the final device; their atomic order also highly affects growth kinetics and defect formation. Moreover, the design of solid-liquid and hybrid interfaces determines their chemical reactivity and stability. In situ monitoring of interface preparation, formation, and interfacial reactions thus promises efficient process control. Paired with a detailed understanding of interface formation mechanisms, however, the true power of in situ control is to allow for specific modification and tuning of interface formation for the device of choice. There are several excellent reviews on in situ approaches covering wide ranges of materials from basic science to applications as well as varieties of preparation and analysis techniques. [2][3][4][5][6][7][8][9][10][11] As indicated in Figure 1, this review will be focused on in situ control over interfaces of materials that are relevant for photoinduced reactions in high-efficiency solar energy conversion and sensing applications with in situ control of semiconductor/polymer/ biological interfaces. We will restrict the techniques to realistic and complex, non-ultrahigh-vacuum (UHV) ambient, where in situ control is most demandingbut also highly desired. The more complex the interfacial reactions are, the more important is the in situ characterization. Ex situ approaches can contribute to an indirect understanding of interface formation, but to understand and, finally, control the dynamic processes taking place, real-time measurements are appropriate. The challenge, we are facing, is twofold: On the one hand, increased interaction with the surrounding ambient causes higher complexity. Yet at the same time, it decreases the number of applicable techniques. On the other hand, those techniques are often elaborate and not necessarily easy to interpret. In a nutshell, we will discuss four main topics:(i) Surface preparation during growth of structures for highefficiency solar energy conversion: World-record conversion efficiencies in both photovoltaics [12,13] and solar water splitting [14] are achieved with multijunction solar cells based on epitaxial III/V compound semiconductor structures. We will discuss in situ controlled preparation Solar energy conversion and photoinduced bioactive sensors are representing topical scientific fields, where interfaces play a decisive role for efficient applications. The key to specifically tune these interfaces is a precise knowledge of interfacial structures and their formation on the microscopic, preferably atomic scale. Gaining thorough insight into interfacial reactions, however, is particularly challenging in relevant complex chemical environment. This review introduces a spectrum of material systems with corresponding interfaces significant for efficient applications in energy conversion and sensor technologies. It highlights appropriate analysis techniques capable of monitoring critical physicochemical reactions in situ during non-vacuu...

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RDS characterization of GaAsSb and GaSb grown by MOVPE

Cited by 17 publications

References 11 publications

In situ monitored MOVPE growth of undoped and p-doped GaSb(100)

In situ monitored MOVPE growth of undoped and p-doped GaSb(100)

Optical properties of GaSb(001)‐c(2 × 6): The role of surface antisite defects

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

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