Re-examination of the SiGe Raman spectra: Percolation/one-dimensional-cluster scheme andab initiocalculations

Percolation-type multi-phonon pattern of Zn(Se,S): Backward/forward Raman scattering and ab initio calculations

“…The reason might be that the short B-C bond usually involves the smaller substituting atom (B), which has more space to move in its C-cage than the bigger species (A). The local strain due to the difference in A-C and B-C bond lengths is thus mainly accommodated by the short B-C bond, with concomitant impact on its diversification into the A-C-surrounded (shorter) and B-C-surrounded (longer) species [8,9].…”

“…multi-mode type for the presumed non random alloys. A unified understanding could be achieved within our phenomenological (1D) percolation model, developed over the past decade [8].…”

Wavelength-tunable infrared light emitting diode based on ordered ZnO nanowire/Si1–x Ge x alloy heterojunction

“…The Raman peaks of the SiGe alloy and the ZnO nanowires are clearly observed. The peak at 520 cm -1 is attributed to the first-order optical phonons of Si-Si bonds [41], while that at 414 cm -1 is assigned to optical phonons involving Si-Ge stretching motions [42][43][44]. The two sharp peaks at 99 and 438 cm -1 correspond to the low-frequency and high-frequency E 2 modes of ZnO, respectively [45,46].…”

“…The two sharp peaks at 99 and 438 cm -1 correspond to the low-frequency and high-frequency E 2 modes of ZnO, respectively [45,46]. The Raman peak at about 300 cm -1 consists of two vibration modes: Ge-Ge stretching motions centered at 290 cm -1 and the Si-Si 2TA mode at 302 cm -1 [41][42][43][44]. The intensity of the Raman peak at about 290 cm -1 , which corresponds to the Ge-Ge mode, increases with increasing mole fraction of Ge, whereas the relative intensity of the Si-Si 2TA mode at 302 cm -1 remains unchanged.…”

Characterization of Hetero-Epitaxial Ge Films on Si Using Multiwavelength Micro-Raman Spectroscopy

“…The alloy composition can be estimated from Raman spectra (position and intensity ratios of the . [32][33][34][35] The presence of Ge and Si intermixing can easily be determined by searching for the Si-Ge peak at ∼400 cm −1 . The linear plot of the Raman spectra ( Fig.…”