Wavelength-tunable infrared light emitting diode based on ordered ZnO nanowire/Si1–x Ge x alloy heterojunction

Zhang, Taiping; Liang, Renrong; Dong, Lin; Wang, Jing; Xu, Jun; Pan, Caofeng

doi:10.1007/s12274-015-0774-2

Cited by 19 publications

(14 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…(e) I – V curve of the LED under various external strains, which show a similar regulated performance as the light emission shown in (d). (a) Reproduced with permission from ref . Copyright 2015 Springer Nature.…”

Section: Piezo-phototronics and Its Applicationsmentioning

confidence: 99%

“…A p-Si 1– x Ge x alloy/n-ZnO p–n junction infrared light LED was built, and the light emission intensity affected by the piezo-phototronic effect has been studied (Figure ). , The light emission wavelength of this device can be tuned via controlling the Ge composition in the Si 1– x Gex alloy. With the Ge composition increasing from 0.18 to 0.23 and 0.29, the average EL peak wavelength of the LED red shifts from 1144 to 1162 and 1185 nm.…”

Section: Piezo-phototronics and Its Applicationsmentioning

confidence: 99%

See 1 more Smart Citation

Piezotronics and Piezo-phototronics of Third Generation Semiconductor Nanowires

2019

Self Cite

View full text Add to dashboard Cite

With the fast development of nanoscience and nanotechnology in the last 30 years, semiconductor nanowires have been widely investigated in the areas of both electronics and optoelectronics. Among them, representatives of third generation semiconductors, such as ZnO and GaN, have relatively large spontaneous polarization along their longitudinal direction of the nanowires due to the asymmetric structure in their c-axis direction. Two-way or multiway couplings of piezoelectric, photoexcitation, and semiconductor properties have generated new research areas, such as piezotronics and piezo-phototronics. In this review, an in-depth discussion of the mechanisms and applications of nanowire-based piezotronics and piezo-phototronics is presented. Research on piezotronics and piezo-phototronics has drawn much attention since the effective manipulation of carrier transport, photoelectric properties, etc. through the application of simple mechanical stimuli and, conversely, since the design of new strain sensors based on the strain-induced change in semiconductor properties.

show abstract

Section: Piezo-phototronics and Its Applicationsmentioning

confidence: 99%

Section: Piezo-phototronics and Its Applicationsmentioning

confidence: 99%

Piezotronics and Piezo-phototronics of Third Generation Semiconductor Nanowires

2019

Self Cite

View full text Add to dashboard Cite

show abstract

“…As silicon technology has the most well‐developed manufacturing procedure in modern electronics, to integrate silicon material with optoelectronics is of great importance . However, due to its indirect band gap and low carrier mobility, Si is not the best choice for large‐scale integrated LEDs with high performances . Considering the enhanced performance due to the piezo‐phototronic effect in piezoelectric‐materials‐based optoelectronics, a Si‐piezoelectric material LED array has been fabricated based on ordered Si–micropillar array–ZnO nanofilm heterostructure …”

Section: Enhancing Light Emission Of Silicon‐based Heterostructure Armentioning

confidence: 99%

Progress in Piezo‐Phototronic‐Effect‐Enhanced Light‐Emitting Diodes and Pressure Imaging

et al. 2015

Self Cite

View full text Add to dashboard Cite

Wurtzite materials exhibit both semiconductor and piezoelectric properties under strains due to the non-central symmetric crystal structures. The three-way coupling of semiconductor properties, piezoelectric polarization and optical excitation in ZnO, GaN, CdS and other piezoelectric semiconductors leads to the emerging field of piezo-phototronics. This effect can efficiently manipulate the emission intensity of light-emitting diodes (LEDs) by utilizing the piezo-polarization charges created at the junction upon straining to modulate the energy band diagrams and the optoelectronic processes, such as generation, separation, recombination and/or transport of charge carriers. Starting from fundamental physics principles, recent progress in piezo-phototronic-effect-enhanced LEDs is reviewed; following their development from single-nanowire pressure-sensitive devices to high-resolution array matrices for pressure-distribution mapping applications. The piezo-phototronic effect provides a promising method to enhance the light emission of LEDs based on piezoelectric semiconductors through applying static strains, and may find perspective applications in various optoelectronic devices and integrated systems.

show abstract

“…However, in future experiments, the developed process flows could be optimized. Up until now, using the same flow, it has been demonstrated that by modulating the Ge composition of the SiGe alloy, we can adjust the band gap of the SiGe film, and thus tune the emission wavelengths of the fabricated ZnO nanowire/SiGe heterojunction LEDs [22].…”

Section: B Optoelectrical Property Of the Developed Led Arraymentioning

confidence: 99%

“…It is a typical p-n heterojunction, which confirms the measured I-V curve results. The electron affinities of Si, and ZnO are χ Si = 4.05 eV and χ ZnO = 4.35 eV, and the band gap energy of Si, SiGe and ZnO are E g,Si = 1.16 eV, E g,SiGe = 1.05 eV and E g,ZnO = 3.37 eV, respectively [22], [26]. The position of Zn i level is at ∼0.22 eV below the conduction band (CB) of ZnO and the position of V O is at ∼0.9 eV above the valence band (VB) of ZnO [27], [28].…”

Section: Piezo-phototronic Effect By the Externally Applied Strainmentioning

confidence: 99%

High-Resolution Light-Emitting Diode Array Based on an Ordered ZnO Nanowire/SiGe Heterojunction

Liang

Zhang

Wang

et al. 2016

IEEE Trans. Nanotechnology

Self Cite

View full text Add to dashboard Cite

A high-resolution light-emitting diode (LED) array based on an ordered n-type ZnO nanowire/p-type SiGe heterojunction is proposed. The pixel pitch of the LED array is about 15 μm, corresponding to a pixel density of 1693 dpi. The fabrication and characterizations of the developed LED device are analyzed in detail. The results show that the electroluminescence (EL) emission of this LED device is mainly in the infrared range, which is dominated by the band gap of the SiGe alloy. Furthermore, a weak EL emission in the visible range can also be observed, and the enhanced light emission is demonstrated by the externally applied compressive strain using a patterned sapphire mold. In addition, the feasibility of implementing GeSn alloys in the developed LED structure is discussed.Index Terms-GeSn alloy, heterojunction, infrared lightemitting diode, piezo-phototronic effect, SiGe film, ZnO nanowire.

show abstract

Wavelength-tunable infrared light emitting diode based on ordered ZnO nanowire/Si1–x Ge x alloy heterojunction

Cited by 19 publications

References 47 publications

Piezotronics and Piezo-phototronics of Third Generation Semiconductor Nanowires

Piezotronics and Piezo-phototronics of Third Generation Semiconductor Nanowires

Progress in Piezo‐Phototronic‐Effect‐Enhanced Light‐Emitting Diodes and Pressure Imaging

High-Resolution Light-Emitting Diode Array Based on an Ordered ZnO Nanowire/SiGe Heterojunction

Contact Info

Product

Resources

About