Reaction between Molybdenum Disulphide and Water

Cannon, Peter; Norton, Francis J.

doi:10.1038/203750a0

Cited by 23 publications

(11 citation statements)

References 2 publications

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“…No indication for molybdenum oxide has been found due to possible oxidation of the surface. 46−48 This conclusion is in good agreement with the Raman spectra at the higher shift region. Peaks at 666 and 820 nm that could be assigned to the stretching modes of the triply coordinated oxygen (Mo 3 –O) and the doubly coordinated oxygen (Mo 2 –O) of the a-MoO 3 phase 49,50 are found only for the case of the nanospheres (Figure S7).…”

Section: Resultssupporting

confidence: 88%

“…Selected area diffraction analysis of a random area of the quantum dot sample (Figure S6) revealed the crystal structure of the quantum dots, which is compatible to the monoclinic crystal structure of Mo 2 S 3 (Figure a). No indication for molybdenum oxide has been found due to possible oxidation of the surface. − This conclusion is in good agreement with the Raman spectra at the higher shift region. Peaks at 666 and 820 nm that could be assigned to the stretching modes of the triply coordinated oxygen (Mo 3 –O) and the doubly coordinated oxygen (Mo 2 –O) of the a-MoO 3 phase , are found only for the case of the nanospheres (Figure S7).…”

Section: Resultssupporting

confidence: 80%

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Unveiling the Structure of MoS_x Nanocrystals Produced upon Laser Fragmentation of MoS₂ Platelets

et al. 2018

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Transition-metal dichalcogenide MoS 2 nanostructures have attracted tremendous attention due to their unique properties, which render them efficient nanoscale functional components for multiple applications ranging from sensors and biomedical probes to energy conversion and storage devices. However, despite the wide application range, the possibility to tune their size, shape, and composition is still a challenge. At the same time, the correlation of the structure with the optoelectronic properties is still unresolved. Here, we propose a new method to synthesize various morphologies of molybdenum sulfide nanocrystals, on the basis of ultrashort-pulsed laser fragmentation of MoS 2 platelets. Depending on the irradiation conditions, multiple MoS x morphologies in the form of nanoribbons, nanospheres, and photoluminescent quantum dots are obtained. Besides the detailed structural analysis of the various crystals formed, the structure–property relation is investigated and discussed.

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Section: Resultssupporting

confidence: 88%

Section: Resultssupporting

confidence: 80%

Unveiling the Structure of MoS_x Nanocrystals Produced upon Laser Fragmentation of MoS₂ Platelets

et al. 2018

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“…The subthreshold swing increases from 1.025 to 4.0 V/dec after functionalization in our device (see Supporting Information Figure S10). In contrast to the above results, exposing the MoS 2 device with only water for 24 h without gold source causes a reduction in conductivity (∼10 folds) and mobility (∼2.33 folds), indicating generation of defects and nucleation sites on MoS 2 via water interaction (see Supporting Information, Figure S11 and S12).…”

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confidence: 59%

Controlled, Defect-Guided, Metal-Nanoparticle Incorporation onto MoS₂ via Chemical and Microwave Routes: Electrical, Thermal, and Structural Properties

et al. 2013

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Ultrathin (0.3-3 nm) metal dichalcogenides exhibit confinement of carriers, evolution of band-structure and photophysical properties with thickness, high on/off rectification (in MoS2, WS2, and so forth) and high thermal absorption. Here, we leverage the stable sulfur/nobel-metal binding to incorporate highly capacitive gold nanoparticles (Au NPs) onto MoS2 to raise the effective gate-voltage by an order of magnitude. Functionalization is achieved via both diffusion limited aggregation and instantaneous reaction arresting (using microwaves) with selective deposition on crystallographic edges (with 60° displacement). The electrical, thermal, and Raman studies show a highly capacitive interaction between Au NP and MoS2 flakes (CAu-MoS2 = 2.17 μF/cm(2)), a low Schottky barrier (14.52 meV), a reduced carrier-transport thermal-barrier (253 to 44.18 meV after Au NP functionalization), and increased thermal conductivity (from 15 to 23 W/mK post NP deposition). The process could be employed to attach electrodes to heterostructures of graphene and MoS2, where a gold film could be grown to act as an electron-tunneling gate-electrode connected to MoS2.

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“…Since the presence of amorphous carbon on the substrate may act as a nucleation center, its elimination alone leads to smaller nucleation densities and, thus, larger domains. Second, H 2 O was shown to etch and re-evaporate TMDCs; ,, therefore, small amounts of water vapor present in the system react with some of the small/defective WS 2 nuclei/domains, causing their re-evaporation, thereby reducing the nucleation density as well. Thus, the most relevant reactions taking place during the “etch step” in which the substrate and the grown domains are exposed to water vapor, but not to metal and chalcogen precursors, are the following: , …”

Section: Results and Discussionmentioning

confidence: 99%

Growth-Etch Metal–Organic Chemical Vapor Deposition Approach of WS₂ Atomic Layers

et al. 2020

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Metal−organic chemical vapor deposition (MOCVD) is one of the main methodologies used for thin-film fabrication in the semiconductor industry today and is considered one of the most promising routes to achieve large-scale and high-quality 2D transition metal dichalcogenides (TMDCs). However, if special measures are not taken, MOCVD suffers from some serious drawbacks, such as small domain size and carbon contamination, resulting in poor optical and crystal quality, which may inhibit its implementation for the large-scale fabrication of atomic-thin semiconductors. Here we present a growthetch MOCVD (GE-MOCVD) methodology, in which a small amount of water vapor is introduced during the growth, while the precursors are delivered in pulses. The evolution of the growth as a function of the amount of water vapor, the number and type of cycles, and the gas composition is described. We show a significant domain size increase is achieved relative to our conventional process. The improved crystal quality of WS 2 (and WSe 2 ) domains wasis demonstrated by means of Raman spectroscopy, photoluminescence (PL) spectroscopy, and HRTEM studies. Moreover, time-resolved PL studies show very long exciton lifetimes, comparable to those observed in mechanically exfoliated flakes. Thus, the GE-MOCVD approach presented here may facilitate their integration into a wide range of applications.

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Reaction between Molybdenum Disulphide and Water

Cited by 23 publications

References 2 publications

Unveiling the Structure of MoS_x Nanocrystals Produced upon Laser Fragmentation of MoS₂ Platelets

Unveiling the Structure of MoS_x Nanocrystals Produced upon Laser Fragmentation of MoS₂ Platelets

Controlled, Defect-Guided, Metal-Nanoparticle Incorporation onto MoS₂ via Chemical and Microwave Routes: Electrical, Thermal, and Structural Properties

Growth-Etch Metal–Organic Chemical Vapor Deposition Approach of WS₂ Atomic Layers

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Reaction between Molybdenum Disulphide and Water

Cited by 23 publications

References 2 publications

Unveiling the Structure of MoSx Nanocrystals Produced upon Laser Fragmentation of MoS2 Platelets

Unveiling the Structure of MoSx Nanocrystals Produced upon Laser Fragmentation of MoS2 Platelets

Controlled, Defect-Guided, Metal-Nanoparticle Incorporation onto MoS2 via Chemical and Microwave Routes: Electrical, Thermal, and Structural Properties

Growth-Etch Metal–Organic Chemical Vapor Deposition Approach of WS2 Atomic Layers

Contact Info

Product

Resources

About

Unveiling the Structure of MoS_x Nanocrystals Produced upon Laser Fragmentation of MoS₂ Platelets

Unveiling the Structure of MoS_x Nanocrystals Produced upon Laser Fragmentation of MoS₂ Platelets

Controlled, Defect-Guided, Metal-Nanoparticle Incorporation onto MoS₂ via Chemical and Microwave Routes: Electrical, Thermal, and Structural Properties

Growth-Etch Metal–Organic Chemical Vapor Deposition Approach of WS₂ Atomic Layers