Reaction of NO on Vanadium Oxide Surfaces: Observation of the NO Dimer Formation

Jeong, Hyun Suck; Kim, Chang Min

doi:10.5012/bkcs.2007.28.3.413

Cited by 3 publications

(1 citation statement)

References 18 publications

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“…3(e)), there is also a peak at around 395.54 eV assigned to Zn-N, [24] and the peaks at around 399.79 eV and 398.66 eV were assigned to -NH-, [31] C-N, [32] and N-O in the NO molecule. [33] Compared with the N-doped ZnO film without Mg, the film with Mg shows no obvious feature at the energy range higher than 402 eV, suggesting that Mg could inhibit (N 2 ) O production, while at the energy range from 397 eV to 402 eV, a hybridization peak arises in the film with Mg, which is split into several small peaks in the film without Mg. If atomic sensitivity factor is taken into account, [34] combining the XPS data from the N-doped ZnO and Mg-N co-doped ZnO's zinc (Fig.…”

Section: The X-ray Photoelectron Spectroscopymentioning

confidence: 93%

Influence of nitrogen and magnesium doping on the properties of ZnO films

Wang

Zhou

et al. 2016

Chinese Phys. B

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Undoped ZnO and doped ZnO films were deposited on the MgO(111) substrates using oxygen plasma-assisted molecular beam expitaxy. The orientations of the grown ZnO thin film were investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction (XRD). The film roughness was measured by atomic force microscopy, which was correlated with the grain sizes determined by XRD. Synchrotron-based x-ray absorption spectroscopy was performed to study the doping effect on the electronic properties of the ZnO films, compared with density functional theory calculations. It is found that, nitrogen doping would hinder the growth of thin film, and generate the N O defect, while magnesium doping promotes the quality of nitrogen-doped ZnO films, inhibiting (N 2 ) O production and increasing nitrogen content.

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Section: The X-ray Photoelectron Spectroscopymentioning

confidence: 93%

Influence of nitrogen and magnesium doping on the properties of ZnO films

Wang

Zhou

et al. 2016

Chinese Phys. B

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Deactivation, reactivation and super-activation of Fe-N/C oxygen reduction electrocatalysts: Gas sorption, physical and electrochemical investigation using NO and O2

Boldrin

Malko

Mehmood

et al. 2021

Applied Catalysis B: Environmental

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Adsorption Configuration Changes and Reactions of N2O on V(110) between 80 and 200 K

Doh¹,

Jeong²,

Kim³

2010

Chemistry Letters

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Adsorption and reactions of N 2 O on V(110) have been investigated. The N 2 O molecule is adsorbed on V(110) through the terminal nitrogen atom at 80 K. The molecular axis of N 2 O is tilted from the surface, and the tilt angle is greater than 55°. The adsorption configuration of N 2 O changes in the temperature range of 80 to 120 K, and decomposition of N 2 O takes place to produce N 2 .The reaction of nitrogen oxides (NO x ) on metal and metal oxide surfaces has been the subject of numerous surface science studies. Nitrogen oxides are major components of air pollution, and the catalytic reaction of NO x on solid surfaces is important in environmental chemistry. In surface science studies of NO x , nitric oxide (NO) has been most extensively studied. 1 In the process of the NO reaction on solid surfaces, formation and desorption of nitrous oxide (N 2 O) has been frequently observed. 2To better understand the surface reaction of NO, it is crucial to investigate the adsorption and reactions of N 2 O on solid surfaces.In the present study the adsorption and reactions of N 2 O on V(110) have been investigated using X-ray photoelectron spectroscopy (XPS) and a near-edge X-ray absorption fine structure (NEXAFS) techniques. We will discuss the adsorption geometry change of N 2 O on V(110) in the process of the N 2 O reaction in the temperature range of 80 to 200 K.The XPS and temperature-programmed desorption (TPD) experiments were carried out in an ultrahigh vacuum (UHV) system whose base pressure was lower than 2 © 10 ¹10 Torr. The XPS spectra were recorded using a 300 W Al K¡ X-ray source and a hemispherical analyzer (model VG Cram 2). The NEXAFS experiment was performed at the 2B1 beam line of the Pohang Accelerator Laboratory, Korea. NEXAFS spectra were obtained by measuring partial electron yield using a hemispherical electron energy analyzer. The V(110) crystal was purchased from Metal Crystals and Oxides and cleaned by using a standard procedure. N 2 O was introduced to the analysis chamber using a leak valve.TPD was utilized to investigate the desorption products from the surface reaction of N 2 O on V(110).

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Reaction of NO on Vanadium Oxide Surfaces: Observation of the NO Dimer Formation

Cited by 3 publications

References 18 publications

Influence of nitrogen and magnesium doping on the properties of ZnO films

Influence of nitrogen and magnesium doping on the properties of ZnO films

Deactivation, reactivation and super-activation of Fe-N/C oxygen reduction electrocatalysts: Gas sorption, physical and electrochemical investigation using NO and O2

Adsorption Configuration Changes and Reactions of N2O on V(110) between 80 and 200 K

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