Reaction Studies between Fluorocarbon Films and Si Using Temperature-Programmed X-Ray Photoelectron and Desorption Spectroscopies

Hirashita, N.; Miyakawa, Yasuhiro; Fujita, Ken; Kanamori, Jun

doi:10.1143/jjap.34.2137

Cited by 11 publications

(10 citation statements)

References 10 publications

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“…1. [36][37][38][39] The morphology of the samples was observed using a scanning electron microscope (SEM, KEYENCE VE-8800) with an accelerating voltage of 20 kV. The X-ray diffraction (XRD) data at room temperature were taken for all samples using CuK¡ radiation.…”

Section: Methodsmentioning

confidence: 99%

Control of Crystallographic Orientation and Structural Characteristics for Electrodeposited Aluminum

et al. 2016

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The effects of preparing condition on crystallographic orientation for electrodeposited aluminum from the plating solution with aluminum chloride (AlCl 3 ) and dimethyl sulfone (DMSO 2 ) were investigated. The molar ratio of DMSO 2 :AlCl 3 was controlled from 10:1 to 10:5. The temperature range of the solution was from 110 to 150°C. The current density was set from 300 to 600 A/m 2 . The crystallographic orientation of the samples was strongly influenced by the solution composition and temperature. The films from the solution with ratio of 10:3 exhibited the highly (200) preferred orientation. On the other hand, current density hardly affected the crystallographic orientation within our current density range. The crystallographic orientation is discussed by means of the Pangarov's model based on the two-dimensional nuclei theory.

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Section: Methodsmentioning

confidence: 99%

Control of Crystallographic Orientation and Structural Characteristics for Electrodeposited Aluminum

et al. 2016

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“…XPS spectra were separated into components by the least squares method in order to estimate the binding energy and photoelectron intensity of each component. Type of bonds was estimated from the previous reports [18][19][20][21].…”

Section: Methodsmentioning

confidence: 99%

“…In the case of radicals, the explanation is not very simple because the deposition rate depends not only on carbon-carrying radical concentration but also on dangling bonds density. The radicals chemisorb on dangling bonds at the surface, which are usually created by ion bombardment [18,19]. When acetylene is used, the anticipated dominant precursor is the ethinyl radical (C 2 H).…”

Section: A-c:h Film Formation In Hexane (Cmentioning

confidence: 99%

Formation of amorphous carbon films in plasma of hydrogen and hydrocarbon mixtures

Grigonis¹,

Rutkūnienė²,

Šilinskas³

2004

Lith. J. Phys.

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Deposition of amorphous hydrogenated carbon (a-C:H) films in CF4, hexane (C6H14), or acetylene (C2H2) precursors and their mixtures with hydrogen (H2) is reported. The films were characterized by Raman spectroscopy (RS) and X-ray spectroscopy (XPS). RS indicates increase of the sp 3 /sp 2 bonding ratio and disorder in graphite clusters with increasing hydrogen content (from 0 to 50% for the acetylene precursor) in the deposition gas mixture. The opposite trend is observed when the hydrogen concentration exceeds 50% (for acetylene) or additional hydrogen is used (for hexane). Formation of polymer-like films in fluorine-containing gas plasma is observed with additional low quantity of hydrogen (∼5%). Composition of these films depends on treatment duration and conditions of irradiation.

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“…11 However, this kind of degradation is presumed not to dominate during the SIMS measurements for the following two reasons. The fluorocarbon films have been reported to become C-rich films via desorption of F-rich species due to ion bombardments with a range of 10 12 ions/cm 2 .…”

Section: A Qualitative Topological Profilingmentioning

confidence: 99%

Study on characterizing fluorocarbon polymer films deposited on an inner surface during high-aspect-ratio contact hole etching using secondary ion mass spectroscopy

Liu

Ikegami

Uchida

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Single-mask, three-dimensional microfabrication of high-aspect-ratio structures in bulk silicon using reactive ion etching lag and sacrificial oxidation Appl. Phys. Lett. 85, 6281 (2004); 10.1063/1.1834720Surface analysis by secondary-ion mass spectroscopy during etching with gas-cluster ion beam Characterization of fluorocarbon films deposited on sidewall and bottom surfaces during high-aspect-ratio contact hole etching has been investigated by secondary ion mass spectrometry ͑SIMS͒. Very high-aspect-ratio contacts, with hole diameters ranging from 0.06 to 0.18 m, were etched in 1 m thick SiO 2 films with polycrystalline Si hard masks by high density CHF 3 /CO or C 4 F 8 /O 2 /Ar plasma generated by a dipole ring-type magnetron reactive ion etching reactor. A series of SIMS studies for test element group chips with high density contact holes first reveal that the SIMS profiles obtained from the etched samples qualitatively exhibit a good measure of fluorocarbon profiles on the inner surfaces of the high-aspect-ratio contact holes. Quantitative evaluation is also discussed further. Fluorocarbon films on the sidewalls polymerized from CHF 3 /CO plasma show a great accumulation of C-rich films at an aspect ratio of around 4. With an increasing aspect ratio of more than approximately 8, the polymers are found to change from C-rich to F-rich films. On the other hand, fluorocarbon films on the sidewalls polymerized from C 4 F 8 /O 2 /Ar plasma are more uniform, much more fluorinated, and much thinner than those of the CHF 3 /CO plasma. Both polymers show a clear C pileup on the Si substrates at the bottom of the contact holes even for sub-0.1 m contacts. This work successfully demonstrates the usefulness of the SIMS measurement for characterizing high-aspect-ratio contacts down to sub-0.1 m diameters.

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Reaction Studies between Fluorocarbon Films and Si Using Temperature-Programmed X-Ray Photoelectron and Desorption Spectroscopies

Cited by 11 publications

References 10 publications

Control of Crystallographic Orientation and Structural Characteristics for Electrodeposited Aluminum

Control of Crystallographic Orientation and Structural Characteristics for Electrodeposited Aluminum

Formation of amorphous carbon films in plasma of hydrogen and hydrocarbon mixtures

Study on characterizing fluorocarbon polymer films deposited on an inner surface during high-aspect-ratio contact hole etching using secondary ion mass spectroscopy

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