We
propose and simulate one-dimensional (1D) diode devices exhibiting
an ionic single metal–halogen interaction inside a semiconducting
SiO-based nanotube (SiONT). After theoretically demonstrating the
structural and dynamical stability of this tubular archetype, that
is, Si6O6, we investigate the quantum transport
of doped devices under applied bias voltages. The self-consistent
density matrices of the diodes are calculated using the Keldysh nonequilibrium
Green’s function technique, coupled to the electrodes via their
exact self-energies. We examine devices containing 1D quantum wires
of Li, Na, and Al, as cathodes, and of halogen atoms (F and Cl), as
anodes, with a 50:50 atomic composition inside a SiONT. These devices
give rise to ionic diatomic molecular junctions, ultimately allowing
a single-electron transport. We show that the resulting alkali–halogen
1D diodes exhibit a region of current suppression, such as in Si-based
p–n devices, with a fair rectifying behavior at [−2.0,
+2.0 V]. For Si6O6 doped with ···Li···Li–F···F···,
after the cut-in voltage, we observe a tunneling effect, with a significant
negative differential resistance region. In the case of ···Al···Al–F···F···
doping, a Schottky-type contact emerges in the junction. These devices
exhibit adjustable threshold voltages (0.5–1.0 V) and rectification
ratios (51–2619) by the electrodes’ atomic composition.
Our results suggest that these actually 1D diodes, based on a single
metal–halogen bond inside a SiONT, are functional and may be
used as prototypes for the development of quantum logic gates. Indeed,
the proposed diatomic molecular tunnel junctions may exhibit quantum
interference phenomenon, entangling bonding and antibonding states,
spatially protected from the environment by an insulating nanotube.