Reactive Co magic cluster formation on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>Si</mml:mi><mml:mrow><mml:mo>(</mml:mo><mml:mn>111</mml:mn><mml:mo>)</mml:mo></mml:mrow><mml:mtext>−</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mn>7</mml:mn><mml:mo>×</mml:mo><mml:mn>7</mml:mn><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>

Zilani, M.A.K.; Sun, Yao; Xu, Hai; Liu, Lei; Feng, Yuan Ping; Wang, Xuesen; Wee, Andrew Thye Shen

doi:10.1103/physrevb.72.193402

Cited by 46 publications

(30 citation statements)

References 28 publications

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“…Previous research done by Zilani et al [12] showed that Co clusters prefer unfaulted half-unit cell of Si(111)-(7x7). On the Si(111)-( √ 19x √ 19) it seams like the surface has less influence on the position of Co clusters than the presence of other clusters.…”

Section: Discussionmentioning

confidence: 93%

“…Creation of 3d ferromag- * E-mail: mcegiel@gmail.com netic metals' silicides nanostructures on Si(111) -(7x7) was intensively investigated [7][8][9]. Co at very low coverage creates magic clusters on Si(111)-(7x7) surface [12]. Bigger amount, but still less than 0.5ML (mono layer) evaporated on a silicon surface is known to create silicides at rather low temperatures -less than 600 K [7].…”

Section: Introductionmentioning

confidence: 99%

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STM investigation of cobalt silicide nanostructuresâ€™ growth on Si(111)-(âˆš19 Ã— âˆš19) substrate

2009

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Continuing miniaturization of electronic devices necessarily requires assembly of several different objects or devices in a small space. Therefore, besides thin films growth, the possibility of fabricating wires and dots [1, 2] at the nanometre scale composed of metal silicides is of the top interest. This report is about the STM/STS investigation of cobalt silicidesâ€™ nanostructures created on Si(111)-(âˆš19 Ã— âˆš19) substrates via Co evaporation and post deposition annealing. This (âˆš19 Ã— âˆš19) reconstruction was induced by Ni doping. Less than 1ML of Co on surface was obtained. Surface reconstruction induced growth of agglomerates of clusters rather than an uniform layer. The post deposition annealing of a crystal sample (up to 670 K, 770 K, 870 K, 970 K, 1070 K and 1170 K) led to creation of silicidesâ€™ nanostructures. Measurements showed that coalescence of Co nanoislands begun around 970 K. Annealing above 1070 K led to alloying of a Co, Ni and Si. As a consequence the Si(111)-(7Ã—7) reconstruction occurred at the cost of Si(111)-(âˆš19 Ã— âˆš19).

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Section: Discussionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

STM investigation of cobalt silicide nanostructuresâ€™ growth on Si(111)-(âˆš19 Ã— âˆš19) substrate

2009

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“…The clusters of this type are built of a Si trimer surrounded by a ring of six metal atoms [21,22]. The regular magic clusters have also been reported for the Co/Si(1 1 1)7 · 7 system [24], but these clusters do not produce extended ordered arrays. In a search for the new types of the magic nanoclusters, we have revisited the submonolayer Tl/Si(1 1 1)7 · 7 system.…”

Section: Introductionmentioning

confidence: 90%

Diverse magic nanoclustering in submonolayer Tl/Si(111) system

et al. 2006

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“…From the viewpoint of practical applications, it is necessary to fabricate stable, ordered, and identical-sized nanoclusters. In the past decade, utilizing the natural template of Si(111)-(797) surface, a number of metal nanoclusters with identical sizes and shapes have been successfully fabricated, such as group IA metals (Na) [11,12], group IB metals (Au) [13], group IIB metals (Zn) [14], group IIIA metals (Al, Ga, Tl, and In) [15][16][17][18][19][20], group IV metals (Pb) [21], and even some 3d ferromagnetic metals (Fe, Co, and Ni) [22][23][24]. By using the ultrahigh-vacuum (UHV) scanning tunneling microscopy (STM) technology combined with the first-principle theoretical simulations, the stable structural configurations of the identical-sized nanoclusters on Si(111)-(797) surface have been clearly illustrated.…”

Section: Introductionmentioning

confidence: 99%

Novel Evolution Process of Zn-Induced Nanoclusters on Si(111)-(7×7) Surface

Zhou

Chen

et al. 2015

Nano-Micro Lett.

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A tiny number of Zn atoms were deposited on Si (111)- (797) surface to study the evolution process of Zninduced nanoclusters. After the deposition, three types (type I, II, and III) of Zn-induced nanoclusters were observed to occupy preferably in the faulted half-unit cells. These Zn-induced nanoclusters are found to be related to one, two, and three displaced Si edge adatoms, and simultaneously cause the depression of one, two, and three closest Si edge adatoms in the neighboring unfaulted half-unit cells at negative voltages, respectively. First-principles adsorption energy calculations show that the observed type I, II, and III nanoclusters can reasonably be assigned as the Zn 3 Si 1 , Zn 5 Si 2 , and Zn 7 Si 3 clusters, respectively. And Zn 3 Si 1 , Zn 5 Si 2 , and Zn 7 Si 3 clusters are, respectively, the most stable structures in cases of one, two, and three displaced Si edge adatoms. Based on the above energy-preferred models, the simulated bias-dependent STM images are all well consistent with the experimental observations. Therefore, the most stable Zn 7 Si 3 nanoclusters adsorbed on the Si(111)-(797) surface should grow up on the base of Zn 3 Si 1 and Zn 5 Si 2 clusters. A novel evolution process from Zn 3 Si 1 to Zn 5 Si 2 , and finally to Zn 7 Si 3 nanocluster is unveiled.

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Reactive Co magic cluster formation onSi(111)−(7×7)

Cited by 46 publications

References 28 publications

STM investigation of cobalt silicide nanostructuresâ€™ growth on Si(111)-(âˆš19 Ã— âˆš19) substrate

STM investigation of cobalt silicide nanostructuresâ€™ growth on Si(111)-(âˆš19 Ã— âˆš19) substrate

Diverse magic nanoclustering in submonolayer Tl/Si(111) system

Novel Evolution Process of Zn-Induced Nanoclusters on Si(111)-(7×7) Surface

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