Reactive Diffusion in the GaSb-Co System at 500°C

Kodentsov, AA Alexander; Markovski, SL Slobodan; Cserháti, Csaba; Loo, van Fjj Frans

doi:10.4028/www.scientific.net/ddf.194-199.1619

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“…In our previous work , we have explored some thermodynamic and kinetic aspects of solid-state interactions in the Ga−X−Co (X = P, As, Sb) systems using the bulk diffusion couple technique. Since the time of these publications, substantial progress has been made in understanding the reaction behavior of Co films on GaSb substrates.…”

Section: Introductionmentioning

confidence: 99%

Interfacial Reactions in GaSb/Co Metallization Contacts during Thermal Processing

et al. 2002

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The utility of thermodynamic potential (activity) diagrams in predicting the reaction zone morphology developed in the GaSb/Co metallization contacts during thermal processing is demonstrated. A number of experiments were designed to test the model. These are aimed at determining phase equilibria in the Ga−Sb−Co system and studying the microstructural evolution of the reaction zone in bulk as well as thin-film diffusion couples. Interfacial reactions between cobalt and single-crystal (001) GaSb have been investigated at 500 °C. No ternary phases exist in the system at this temperature. The cubic CoGa and CoSb3 phases were observed to be dominant growing compounds in the semi-infinite bulk as well as in thin-film reaction couples, the latter intermetallic being formed next to the GaSb substrate. When the Co film is consumed by the reaction, the final configuration of the metallization layer GaSb/CoSb3/CoGa was found. This information is important in designing uniform, stable contacts for the metallization of gallium antimonide.

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Section: Introductionmentioning

confidence: 99%