Reactive ion beam etching of GaAs and related compounds in an inductively coupled plasma of Cl2–Ar mixture

Hahn, Yoon‐Bong; Lee, J. W.; Vawter, G.A.; Shul, R. J.; Abernathy, C. R.; Hays, David C.; Lambers, E. S.; Pearton, S. J.

doi:10.1116/1.590565

Cited by 20 publications

(4 citation statements)

References 26 publications

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“…From the results, we can infer the energy band diagrams at/around the tilt boundary. The electron affinity and the energy gap of SrTiO 3 are 4.1 eV and 3.3 eV [5], respectively, and the work function of Au is 5.1 eV [6]. Using these values, we approximate the energy band diagrams at the SrTiO 3 /Au interface after the annealing as in Fig.…”

Section: Resultsmentioning

confidence: 99%

Electron-Beam-Induced Current Study of Electronic Property Change at SrTiO<sub>3</sub> Bicrystal Interface Induced by Forming Process

Kato

Nakamura

Son

et al. 2012

MSF

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We investigated the spatial variation of energy band structure in a SrTiO3 (001) bicrystal with the (100) 10° tilt boundary before and after the annealing process at 973 K under a vacuum of ~10-7 Torr and after the subsequent forming process with electrical dielectric breakdown, using electron beam induced current (EBIC) method in the temperature range between 200 and 300K. Although the EBIC contrast at the tilt boundary was weak before and after the annealing, it became visible after the forming process and stronger as the observation temperature decreased to less than 260 K. It was found that the EBIC direction at the tilt boundary is opposite to that in the matrix, i.e. the single crystalline regions of both sides of the tilt boundary. In the matrix, the EBIC increased after the annealing and decreased again after the forming process. We propose energy band structures of the bicrystalline SrTiO3 after the annealing and after the forming process.

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Section: Resultsmentioning

confidence: 99%

Electron-Beam-Induced Current Study of Electronic Property Change at SrTiO<sub>3</sub> Bicrystal Interface Induced by Forming Process

Kato

Nakamura

Son

et al. 2012

MSF

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“…A plasma generation method using an ECR has been applied for etching and deposition [9,10]. In contrast to conventional RIE [11] the ion energy and flux can be controlled independently in the RIBE system [12] and yields better ion directionality due to its high mean-free path and high ionto-radical density ratio by a divergent magnetic field method.…”

Section: Introductionmentioning

confidence: 99%

Silver Patterning by Reactive Ion Beam Etching for Microelectronics Application

Gao¹,

Gstoettner²,

Emling³

et al. 2004

MRS Proc.

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Dry etching of silver for the metallization in microelectronics is investigated. Etching is performed using an electron-cyclotron-resonance reactive-ion-beam-etching system (ECR-RIBE) in an Ar/CF 4 or Ar/CF 4 /O 2 mixture. The etch characteristics are strongly affected by ion energy (beam voltage and microwave energy); the O 2 concentration in the reactive mixture has only a small effect. An anisotropic, smooth etch profile and clean surface are obtained. Focused ion beam (FIB) and atomic force microscopy (AFM) have been used to study the etched profile and the roughness, respectively.

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“…As seen in the figure, our target requires a superior fabrication technique compared with the existing GaAs=AlGaAs optical devices such as air-bridge PCs and the vertical-cavity surfaceemitting laser (VCSEL) system. [9][10][11][12] Reports on this technique are very limited and thus the etching mechanism has not yet been substantially discussed. 13) Recently, we have reported a PC structure with air holes deeper than 1.5 µm and a diameter of 120 nm fabricated using SiO 2 as the mask layer.…”

Section: Introductionmentioning

confidence: 99%

Dry etching of Al-rich AlGaAs with silicon nitride masks for photonic crystal fabrication

Zhang¹,

Togano²,

Hashimura³

et al. 2015

Jpn. J. Appl. Phys.

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We investigate inductively coupled plasma (ICP) deep dry etching of Al0.8Ga0.2As for photonic crystal (PC) fabrication using a Cl2/BCl3/CH4 gas mixture. On the basis of our previous report [Y. Kitabayashi et al., Jpn. J. Appl. Phys. 52, 04CG07 (2013)], we obtained a PC structure having air holes deeper than 1.5 µm and a diameter of 120 nm by adjusting the gas flow rate and increasing the process pressure. In this study, silicon nitride (SiNx) and SiO2 were both used as the mask layer. Furthermore, samples with SiNx and SiO2 masks for ICP deep dry etching were also fabricated and compared. The vertical profile of the PC structure with the SiNx mask layer displayed a rounded shape that was caused by the charge up in the mask layer. Then, a thinner mask layer was used to ease the effects of mask retardation and charge up. As a result, a PC structure with a SiNx mask layer having air holes deeper than 1.7 µm and a diameter of 190 nm was successfully fabricated.

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Reactive ion beam etching of GaAs and related compounds in an inductively coupled plasma of Cl2–Ar mixture

Cited by 20 publications

References 26 publications

Electron-Beam-Induced Current Study of Electronic Property Change at SrTiO<sub>3</sub> Bicrystal Interface Induced by Forming Process

Electron-Beam-Induced Current Study of Electronic Property Change at SrTiO<sub>3</sub> Bicrystal Interface Induced by Forming Process

Silver Patterning by Reactive Ion Beam Etching for Microelectronics Application

Dry etching of Al-rich AlGaAs with silicon nitride masks for photonic crystal fabrication

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