Reactive ion beam machining of diamond using an ECR-type oxygen source

Kiyohara, Shuji; Miyamoto, Iwao

doi:10.1088/0957-4484/7/3/017

Cited by 12 publications

(3 citation statements)

References 19 publications

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“…After adsorption of the benzoic acids, the hole conducting material spiro-MeOTAD was spin-coated onto the modified TiO 2 electrode. Partial oxidation of spiro-MeOTAD by N(PhBr) 3 SbCl 6 was used to control the dopant level [5] and to increase the conductivity of the holeconducting layer. Finally a layer of gold was evaporated on top to form the ohmic back contact.…”

mentioning

confidence: 99%

Modification of TiO2 Heterojunctions with Benzoic Acid Derivatives in Hybrid Molecular Solid-State Devices

2000

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confidence: 99%

Modification of TiO2 Heterojunctions with Benzoic Acid Derivatives in Hybrid Molecular Solid-State Devices

2000

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“…This supports the idea that the carbon is chemically etched by the beam, rather than sputtered, but differs from results obtained by Whetten and Kiyohara using a cyclotron resonance ion source at similar energies but higher current and pressure. 23,24 For boron, we find that its steady-state partial sputter yield has a weak energy dependence. 22 Therefore, if we assume that the ion yield is proportional to the partial sputter yield, the ionization probability will also have weak energy dependence.…”

Section: Resultsmentioning

confidence: 85%

Application of ultra low energy (ULE) SIMS to emerging diamond technologies

Mata

Dowsett

Tajani

et al. 2006

Surface & Interface Analysis

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We report ultra low energy secondary ion mass spectrometry (ULE-SIMS) analysis of a single crystal boron delta-doped diamond layer with normal incidence O 2 + beam at incident energies of 300 eV, 500 eV and 1 keV. The diamond layer was epitaxially grown using a chemical vapor deposition (CVD) method on a synthetic single crystal diamond substrate grown using a high-temperature, high-pressure technique. The good crystalline quality of the homoepitaxal boron delta-doped layer has allowed the study of the ULE-SIMS measurement process.In contrast to the case of silicon, the transient effects on the sputter yield are very weak: we obtained a differential shift of 0.6 nm/keV -smaller than the depth measurement uncertainty (i.e. the initial erosion rate is marginally slower).The boron ion yield is independent of the incident energy and the decay length is almost so (3.0, 3.1 and 3.5 nm for 300 eV, 500 eV and 1 keV respectively), reflecting a good depth resolution possibly limited by sample structure.The erosion rate is energy independent over a wide range, but carbon ion yields are both energy and boron concentration dependent for high boron concentrations, proportional to (Y B + ) 0.85 . For this reason, care is needed with the boron quantification when the boron content is high.

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“…The CVD diamond films were etched using a plasma etching apparatus with an ECR-type oxygen source [6], as shown in figure 1. Magnets are arranged around the periphery of the plasma chamber to achieve the microwave ECR condition (magnetic flux density: 875 G) which enables the plasma to effectively absorb the microwave energy at low gas pressures from 10 −3 to 10 −1 Pa [7]. The CVD diamond film samples were fixed on a molybdenum holder positioned approximately 5 cm from the plasma chamber outlet.…”

Section: Experimental Apparatus and Proceduresmentioning

confidence: 99%

Plasma etching of CVD diamond films using an ECR-type oxygen source

1999

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The etching characteristics of CVD (chemical vapour deposition) diamond films processed with an ECR (electron cyclotron resonance) oxygen plasma are investigated. The etching rate increases linearly with increasing microwave power in the range from 100 to 300 W. For any value of microwave power, the etching rate first increases with increasing gas flow rate, reaches a maximum rate at a gas flow rate of 3 sccm (standard cc min-1), and then decreases gradually with further increase in the gas flow rate. The etching rate increases linearly with increasing negative bias voltage in the range from 0 to -600 V. The etching rate for 100 and 300 W of microwave power and a negative bias of -600 V is 17 and three times greater, respectively, than that for 0 V bias. The surface roughness increases with increasing microwave power in the range from 0 to 300 W. The surface roughness before etching is eight times greater than that obtained after plasma etching with 300 W of microwave power. The Raman spectrum of a CVD diamond film after oxygen plasma etching for 1 h shows not only a diamond (sp3 bonding) peak at 1333 cm-1, but also a broad non-diamond (sp2 bonding) peak around 1500 cm-1. However, as the etching time increases, the broad non-diamond peak around 1500 cm-1 disappears.

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Reactive ion beam machining of diamond using an ECR-type oxygen source

Cited by 12 publications

References 19 publications

Modification of TiO2 Heterojunctions with Benzoic Acid Derivatives in Hybrid Molecular Solid-State Devices

Modification of TiO2 Heterojunctions with Benzoic Acid Derivatives in Hybrid Molecular Solid-State Devices

Application of ultra low energy (ULE) SIMS to emerging diamond technologies

Plasma etching of CVD diamond films using an ECR-type oxygen source

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