Reactive-ion-beam-sputtered WN<i>x</i> films on silicon: Growth mode and electrical properties

Eizenberg, M.; Meyer, F.; Benhocine, A.; Bouchier, D.

doi:10.1063/1.356035

Journal of Applied Physics

1994

DOI: 10.1063/1.356035

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Reactive-ion-beam-sputtered WNx films on silicon: Growth mode and electrical properties

M. Eizenberg

F. Meyer

A. Benhocine

et al.

Abstract: Articles you may be interested inEffect of reactiveion bombardment on the properties of silicon nitride and oxynitride films deposited by ion beam sputtering Electrical and optical properties of amorphous hydrogenated silicon prepared by reactive ion beam sputtering

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Reactive-ion-beam-sputtered WNx films on silicon: Growth mode and electrical properties

Abstract: Articles you may be interested inEffect of reactiveion bombardment on the properties of silicon nitride and oxynitride films deposited by ion beam sputtering Electrical and optical properties of amorphous hydrogenated silicon prepared by reactive ion beam sputtering

Cited by 3 publications

References 20 publications

DC magnetron sputtered tungsten: W film properties and electrical properties of W/Si Schottky diodes

DC magnetron sputtered tungsten: W film properties and electrical properties of W/Si Schottky diodes

Structure, morphology and electrical resistance of WxN thin film synthesized by HFCVD method with various N2 contents

Growth, stress and hardness of reactively sputtered tungsten nitride thin films

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